This paper presents an advanced method that combines coupling-of-modes (COM) theory and the finite element method (FEM), which enables the quick extraction of COM parameters and the accurate prediction of the electroacoustic and temperature behavior of surface acoustic wave (SAW) devices. For validation, firstly, the proposed method is performed for a normal SAW resonator. Then, the validated method is applied to analysis of an I.H.P. SAW resonator based on a 29°YX−LT/SiO₂/SiC structure. Via optimization, the electromechanical coupling coefficient (K²) is increased up to 13.92% and a high quality (Q) value of 1265 is obtained; meanwhile, the corresponding temperature coefficient of frequency (TCF) is −10.67 ppm/°C. Furthermore, a double-mode SAW (DMS) filter with low insertion loss and excellent temperature stability is also produced. It is demonstrated that the proposed method is effective even for SAW devices with complex structures, providing a useful tool for the design of SAW devices with improved performance.

SAW devices with a multi-layered piezoelectric substrate have excellent performance due to advantages such as a high quality factor, Q, low loss insertion, large bandwidth, etc. Prior to manufacturing, a comprehensive analysis and proper design are essential to evaluating the device’s key performance indicators, including the Bode Q value, bandwidth, and transverse mode suppression. This study explored the performance of SAW resonators employing a 42°Y-X LiTaO₃ (LT) thin-plate-based multi-layered piezoelectric substrate. The thicknesses for each layer of the 42°Y-X LT/SiO₂/poly-Si/Si substrate were optimized according to the index of phase velocity, Bode Q value, and bandwidth. The effect of the device structure parameters on the dispersion curve and slowness curve was studied, and a flat slowness curve was found to be favorable for transverse mode suppression. In addition, the design of the dummy configuration was also optimized for the suppression of spurious waves. Based on the optimized design, a one-port resonator on the 42°Y-X LT/SiO₂/poly-Si/Si substrate was fabricated. The simulation results and measurements are presented and compared, which provides guidelines for the design of new types of SAW devices configured with complex structures.