This article presents a general-purpose model that enables efficient and accurate calculation of third-order nonlinear signals in surface acoustic wave (SAW) devices. This model is based on piezoelectric constitutive equations combined with perturbation theory, which can be analyzed by full finite element method (FEM). For validation, third-order harmonic (H3) responses and intermodulation distortions (IMD3) in SAW resonators are simulated, and their calculation results fit well to experimental data in the literature. Then, the generation mechanisms of the third-order nonlinearity in SAW resonators are discussed. The dominant generation mechanisms for different nonlinear signals and the relation between electrode materials and H3 peak magnitude are revealed, which provides an important guideline for further nonlinear suppression.

This paper presents an advanced method that combines coupling-of-modes (COM) theory and the finite element method (FEM), which enables the quick extraction of COM parameters and the accurate prediction of the electroacoustic and temperature behavior of surface acoustic wave (SAW) devices. For validation, firstly, the proposed method is performed for a normal SAW resonator. Then, the validated method is applied to analysis of an I.H.P. SAW resonator based on a 29°YX−LT/SiO₂/SiC structure. Via optimization, the electromechanical coupling coefficient (K²) is increased up to 13.92% and a high quality (Q) value of 1265 is obtained; meanwhile, the corresponding temperature coefficient of frequency (TCF) is −10.67 ppm/°C. Furthermore, a double-mode SAW (DMS) filter with low insertion loss and excellent temperature stability is also produced. It is demonstrated that the proposed method is effective even for SAW devices with complex structures, providing a useful tool for the design of SAW devices with improved performance.

With the arrival of the Fifth Generation (5G) communication era, there has been an urgent demand for acoustic filters with a high frequency and ultrawide bandwidth used in radio-frequency (RF) front-ends filtering and signal processing. First-order antisymmetric (A1) lamb mode resonators based on LiNbO₃ film have attracted wide attention due to their scalable, high operating frequency and large electromechanical coupling coefficients (K²), making them promising candidates for sub-6 GHz wideband filters. However, A1 mode resonators suffer from the occurrence of transverse modes, which should be addressed to make these devices suitable for applications. In this work, theoretical analysis is performed by finite element method (FEM), and the admittance characteristics of an A1 mode resonator and displacement of transverse modes near the resonant frequency (f_r) are investigated. We propose a novel Dielectric-Embedded Piston Mode (DEPM) structure, achieved by partially etching a piezoelectric film filled with SiO₂, which can almost suppress the transverse modes between the resonant frequency (f_r) and anti-resonant frequency (f_a) when applied on ZY-cut LiNbO₃-based A1 mode resonators. This indicates that compared with Broadband Piston Mode (BPM), Filled-broadband Piston Mode (FPM) and standard structures, the DEPM structure is superior. Furthermore, the design parameters of the resonator are optimized by adjusting the width, depth and filled materials in the etched window of the DEPM structure to obtain a better suppression of transverse modes. The optimized A1 mode resonator using a DEPM structure exhibits a transverse-free response with a high f_r of 3.22 GHz and a large K² of ~30%, which promotes the application of A1 mode devices for use in 5G RF front-ends.