Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 oC are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -7.35 dB. The results presented here provide a scalable and low-cost epitaxial method for realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

A phasemeter as a readout system for the inter-satellite laser interferometer in a space-borne gravitational wave detector requires not only high accuracy but also insensitivity to amplitude fluctuations and a large fast-acquiring range. The traditional sinusoidal characteristic phase detector (SPD) phasemeter has the advantages of a simple structure and easy realization. However, the output of an SPD is coupled to the amplitude of the input signal and has only a limited phase-detection range due to the boundedness of the sinusoidal function. This leads to the performance deterioration of amplitude noise suppression, fast-acquiring range, and loop stability. To overcome the above shortcomings, we propose a phasemeter based on a tangent phase detector (TPD). The characteristics of the SPD and TPD phasemeters are theoretically analyzed, and a fixed-point simulation is further carried out for verification. The simulation results show that the TPD phasemeter tracks the phase information well and, at the same time, suppresses the amplitude fluctuation to the noise floor of 1 μrad/Hz^1/2, which meets the requirements of GW detection. In addition, the maximum lockable step frequency of the TPD phasemeter is almost three times larger than the SPD phasemeter, indicating a greater fast-acquiring range.