Nanostructured TiO₂ is one of the best materials for photocatalysis, thanks to its high surface area and surface reactivity, but its large energy bandgap (3.2 eV) hinders the use of the entire solar spectrum. Here, it is proposed that defect‐engineered nanostructured TiO₂ photocatalysts are obtained by hydrogenation strategy to extend its light absorption up to the near‐infrared region. It is demonstrated that hydrogenated or colored TiO₂ hollow spheres (THS) composed of hierarchically assembled nanoparticles result in much broader exploitation of the solar spectrum (up to 1200 nm) and the engineered surface enhances the photogeneration of charges for photocatalytic processes. In turn, when applied for photodegradation of a targeted drug (Ciprofloxacin) this results in 82% degradation after 6 h under simulated sunlight. Valence band analysis by photoelectron spectroscopy revealed the presence of oxygen vacancies, whose surface density increases with the hydrogenation rate. Thus, a tight correlation between degree of hydrogenation and photocatalytic activity is directly established. Further insight comes from electron paramagnetic resonance, which evidences bulk Ti³⁺ centers only in hydrogenated THS. The results are anticipated to disclose a new path toward highly efficient photocatalytic titania in a series of applications targeting water remediation and solar fuel production.

We report on the extraordinary superionic conductivity in the fulleride polymer ${\mathrm{Li}}_4{\mathrm{C}}_{60}$, a crystalline material with no disorder. ${}^7\mathrm{Li}$, NMR, and dc frequency dependent conductivity show uncorrelated ionic hopping across small energy barriers ($\Delta E_a\sim 200\mathrm{meV}$) and an ionic conductivity of ${10}^{-2}\mathrm{S}/\mathrm{cm}$ at room temperature, higher than in “standard” ionic conductors. Ab initio calculations of the molecular structure find intrinsic unoccupied interstitial sites that can be filled by ${\mathrm{Li}}^{+}$ cations in stoichiometric ${\mathrm{Li}}_4{\mathrm{C}}_{60}$ even at low temperatures. The low energy required for the occupation of these sites allows a sizable ${\mathrm{Li}}^{+}$ diffusion above 130 K. The results suggest novel application of lithium intercalated fullerides as electrodes in Li ions batteries.

We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.

${\mathrm{Li}}_4{\mathrm{C}}_{60}$, one of the best representatives of lithium intercalated fullerides, features an unusual type of two-dimensional polymerization. Extensive investigations, including laboratory x-ray and synchrotron radiation diffraction, ${}^{13}\mathrm{C}$ NMR, magic angle spinning, and Raman spectroscopy, show a monoclinic $I2∕m$ structure, characterized by chains of $[2+2]$-cycloaddicted fullerenes, sideways connected by single $\mathrm{C}–\mathrm{C}$ bonds. This leads to the formation of polymeric layers, whose insulating nature, deduced from the NMR and Raman spectra, denotes the complete localization of the electrons involved in the covalent bonds.

We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.