Materials providing heat dissipation and electrical insulation are required for many electronic and medical devices. Polymer composites with hexagonal boron nitride (hBN) may fulfil such requirements. The focus of this study is to compare composites with hBN fabricated by injection moulding (IM), powder bed fusion (PBF) and casting. The specimens were characterised by measuring thermal conductivity, tensile properties, hardness and hBN particle orientation. A thermoplastic polyurethane (TPU) was selected as the matrix for IM and PBF, and an epoxy was the matrix for casting. The maximum filler weight fractions were 65%, 55% and 40% for IM, casting and PBF, respectively. The highest thermal conductivity (2.1 W/m∙K) was measured for an IM specimen with 65 wt% hBN. However, cast specimens had the highest thermal conductivity for a given hBN fraction. The orientation of hBN platelets in the specimens was characterised by X-ray diffraction and compared with numerical simulations. The measured thermal conductivities were discussed by comparing them with four models from the literature (the effective medium approximation model, the Ordóñez-Miranda model, the Sun model, and the Lewis-Nielsen model). These models predicted quite different thermal conductivities vs. filler fraction. Adding hBN increased the hardness and tensile modulus, and the tensile strength at high hBN fractions. The strength had a minimum as the function of filler fraction, while the strain at break decreased. These trends can be explained by two mechanisms which occur when adding hBN: reinforcement and embrittlement.

A metal-insulator-metal (MIM) composite right/left-handed (CRLH) microstrip 3-dB coupled-line (CL) coupler exhibiting simple design characteristics, high compactness and immunity to spurious resonances is presented along with a rigorous design procedure. This CL coupler can be easily designed to achieve any arbitrary level of coupling. In comparison with its interdigital counterpart, this coupler is twice smaller and exhibits much higher design simplicity

Solid-liquid interdiffusion (SLID) bonding for microelectronics and microsystems is a bonding technique relying on intermetallics. The high-melting temperature of intermetallics allows for system operation at far higher temperatures than what solder-bonded systems can do, while still using similar process temperatures as in common solder processes. Additional benefits of SLID bonding are possibilities of fine-pitch bonding, as well as thin-layer metallurgical bonding. Our group has worked on a number of SLID metal systems. We have optimized wafer-level Cu-Sn SLID bonding to become an industrially feasible process, and we have verified the reliability of Au-Sn SLID bonding in a thermally mismatched system, as well as determined the actual phases present in an Au-Sn SLID bond. We have demonstrated SLID bonding for very high temperatures (Ni-Sn, having intermetallics with melting points up to 1280°C), as well as SLID with low process temperatures (Au-In, processed at 180°C, and Au-In-Bi, processed at 90–115°C). We have verified experimentally the high-temperature stability for our systems, with quantified strength at temperatures up to 300°C for three of the systems: Cu-Sn, Au-Sn and Au-In.

Anisotropic conductive adhesives (ACAs) are the preferred interconnection technology for applications that employ large dies, flexible substrates, and ultra fine‐pitch interconnects. Conventional ACAs require relatively high bonding pressures and temperatures, and ultra fine‐pitch applications challenge the trade‐off between low interconnect resistance and risk of short circuits. This study introduces an ACA‐like interconnection technology that addresses these limitations, allowing for low‐pressure, low‐temperature assembly processes with enhanced particle control at the interconnects. Conductive particles are deposited onto a patterned carrier and subsequently transferred to electrical pads using either non‐conductive film or Ag sintering. The Ag sintering process is performed at a low temperature (140 °C) and low bonding pressure (1 N for a 10 × 10 mm² chip). The capability of controlling the position and number of conductive particles within individual interconnects is demonstrated. This presents possibilities for achieving ultra‐fine pitch interconnects with negligible risk of short circuits, without compromising electrical resistance. It is demonstrated that interconnect resistance can be tuned by varying the number of conductive particles (achieving a resistance as low as 33 mΩ with 25 particles per interconnect). This approach is applicable to scenarios where the bonding force and temperature must remain low due to the nature of substrate materials.

Purpose: This paper aims to demonstrate low-temperature bonding for piezoelectric materials at temperatures well below the relevant Curie temperatures so as to avoid depolarization of the piezoelectric material during bonding. Design/methodology/approach: Au-coated test samples of lead zirconate titanate (PZT) are bonded to a WC-based resonant backing layer with In–Bi eutectic material in which the In–Bi metal system is a preform or thin, evaporated layers. The bonded samples are characterized using electrical impedance spectroscopy and cross-section microscopy. The first technique verifies the integrity of polarization and reveals the quality of the bondline in a non-destructive manner, particularly looking for voids and delaminations. The latter technique is destructive but gives more precise information and an overview of the structure. Findings: Successful low-temperature (115°C) bonding with intact PZT polarization was demonstrated. The bondlines show a layered structure of Au/Au–In intermetallic compounds (with Bi inclusions)/Au, capable of withstanding temperatures as high as 271°C before remelting occurs. For bonded samples using In–Bi preform, repeatable bonds of high quality (very little voiding) were obtained, but the bonding time is long (1 h or more). For bonded samples using evaporated thin films of In–Bi, bonding can be performed in 30 min, but the process needs further optimization to be repeatable. Originality/value: Low-temperature solid-liquid interdiffusion (SLID) bonding is a novel technique, merging the fields of low-temperature solder bonding with the SLID/transient liquid phase (TLP) approach, which is normally used for much higher temperatures.

For uncooled infrared cameras based on microbolometers, silicon caps are often utilized to maintain a vacuum inside the packaged bolometer array. To reduce Fresnel reflection losses, anti-reflection coatings are typically applied on both sides of the silicon caps.This work investigates whether black silicon may be used as an alternative to conventional anti-reflective coatings. Reactive ion etching was used to etch the black silicon layer and deep cavities in silicon. The effects of the processed surfaces on optical transmission and image quality were investigated in detail by Fourier transform infrared spectroscopy and with modulated transfer function measurements. The results show that the etched surfaces enable similar transmission to the state-of-the-artanti-reflection coatings in the 8–12 µm range and possibly obtain wider bandwidth transmission up to 24 µm. No degradation in image quality was found when using the processed wafers as windows. These results show that black silicon can be used as an effective anti-reflection layer on silicon caps used in the vacuum packaging of microbolometer arrays.