Femtosecond laser processing technology is an advanced sub-micro-processing technique that enables the non-contact processing of various materials. This technology can be used to apply sub-micro structures for purposes such as hydrophilicity enhancement, optical transmittance improvement, and photonics detection. However, when it comes to processing micro/nanostructures on highly brittle materials using femtosecond lasers, there are challenges such as low processing efficiency, generation of debris, and microcracking. In this paper, we propose a method called the out-of-focus femtosecond laser direct writing technique combined with wet etching. This method offers simplicity, speed, and flexibility in preparing dense, large-area sub-microstructured surfaces on the brittle material sapphire. Our detailed investigation focuses on the impact of laser processing parameters (direct writing period, distance of focusing, direct writing speed, etc.) on the sub-microstructures of Al₂O₃ surfaces. The results demonstrate that this method successfully creates embedded sub-microstructures on the sapphire surface. The microholes, with a diameter of approximately 2.0 μm, contain sub-micro structures with a minimum width of 250 ± 20 nm. Additionally, we conducted experiments to assess the optical transmittance of sapphire nanostructures in the range of 350–1200 nm, which exhibited an average transmittance of approximately 77.0%. The water contact angle (CA) test yielded a result of 52 ± 2°, indicating an enhancement in the hydrophilicity of the sapphire nanostructures with only a slight reduction in optical transmittance. Our efficient fabrication of sub-microstructures on the sapphire surface of highly brittle materials offers a promising method for the production and application of brittle materials in the field of micro-optics.

A femtosecond laser raster-type in situ repetitive direct writing technique was used for the fabrication of anti-reflective microhole structures in Germanium (Ge) in the visible near-infrared range (300–1800 nm). This technique builds a layer of microstructured arrays on the surface of Ge, enabling Ge to exhibit excellent anti-reflective properties. The large-area micro-nanostructures of Ge were fabricated using femtosecond laser raster-type in situ repetitive direct writing. Ge microstructures are characterized by their structural regularity, high processing efficiency, high reproducibility, and excellent anti-reflective properties. Experimental test results showed that the average reflectance of the Ge microporous structure surface in the range of 300–1800 nm was 2.25% (the average reflectance of flat Ge was 41.5%), and the lowest reflectance was ~1.6%. This microstructure fabrication drastically reduced the optical loss of Ge, thus enhancing the photothermal utilization of Ge. The many nanoburrs and voids in the Ge microporous structure provided excellent hydrophobicity, with a hydrophobicity angle of up to 133 ± 2° (the hydrophobicity angle of flat Ge was 70 ± 2°). The high hydrophobicity angle allows for strong and effective self-cleaning performance. The femtosecond laser raster-type in situ repeatable direct writing technology has many desirable properties, including simplicity, high accuracy, flexibility, and repeatability, that make it one of the preferred choices for advanced manufacturing. The Ge micro-nanostructured arrays with excellent optical anti-reflective properties and hydrophobicity have become an attractive alternative to the current photo-thermal absorbers. It is expected to be used in many applications such as solar panels, photovoltaic sensors, and other optoelectronic devices.

We studied the laser-induced thermal damage on the surface of a single crystal silicon mirror illuminated by a mid-infrared intense laser. We used mid−infrared quasi-continuous wave lasers to irradiate the surface of the single−crystal silicon mirror. The power density of the irradiation process is 1 kW/cm² to 17 kW/cm², and the transient temperature field and thermal stress field under different laser fluxes were obtained. The simulation results show that we can calculate the thermal stress and temperature under laser irradiation. In addition, irradiance exceeding the corresponding breaking strength and melting point limit was obtained by the model. We can predict the irradiance that causes cracking and melting. There is little difference between experimental results and simulation results. On this basis, the thermal damage to the surface of the silicon wafer caused by continuous mid−infrared laser irradiation was studied.

Three-dimensional (3D) plasmonic metamaterials have become a trend in the application of nanophotonic devices. In this paper, a convenient and inexpensive method for the design of 3D multilayer plasmonic metamaterials is constructed using a one-step self-shielded reactive-ion-etching process (OSRP) and a thermal evaporation system, which provides an efficient and low-cost method for the preparation of surface-enhanced Raman spectroscopy (SERS) substrates. The near-field enhancement of the 3D plasmonic metamaterials provides highly efficient electromagnetic resonance, and highly sensitive and uniform SERS sensing capabilities. The SERS detection results of rhodamine B (Rh. B) and rhodamine 6G (R6G) on this substrate show that the detection limit could reach 10^–13 mol/L, and the signal could give expression to excellent uniform stability. The results show that high sensitivity and high robustness SERS substrates can be prepared with high efficiency and low cost.

Photothermal materials often prioritize solar absorption while neglecting thermal radiation losses, which diminishes thermal radiation conversion efficiency. This study addresses this gap by introducing a germanium (Ge) subwavelength structure (SWS) designed to optimize both solar absorption and infrared emissivity. Using a self-masked reactive ion etching (RIE) technique, we achieved a peak absorption of 98.8% within the 300 nm to 1800 nm range, with an infrared emissivity as low as 0.32. Under solar illumination of 1000 W/m², the structure’s temperature increased by 50 °C, generating a heating power of 800 W/m². Additionally, it demonstrated good mechanical and thermal stability at high temperatures and possessed a hydrophobic angle of 132°, ensuring effective self-cleaning. These characteristics make the Ge SWS suitable for application in solar panels, displays, sensors, and other optoelectronic devices.