The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of high-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes are investigated. The main gas-phase and solid products of plasma-chemical transformations are determined. Thermodynamic analysis of SiCl₄ + H₂ and GeCl₄ + H₂ systems for optimal process parameters was carried out. Using the example of hydrogen reduction of SiCl₄ by the method of numerical modeling, gas-dynamic and thermal processes for this type of discharge are investigated. The impurity composition of gas-phase and solid reaction products is investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, is shown.

The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of high-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes are investigated. The main gas-phase and solid products of plasma-chemical transformations are determined. Thermodynamic analysis of SiCl4 + H2 and GeCl4 + H2 systems for optimal process parameters was carried out. Using the example of hydrogen reduction of SiCl4 by the method of numerical modeling, gas-dynamic and thermal processes for this type of discharge are investigated. The impurity composition of gas-phase and solid reaction products is investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, is shown.

Currently, the most common method of silane synthesis for electronics and photovoltaics is trichlorosilane dismutation. Therefore, an experimental study of the kinetics of the dismutation reaction of chlorosilanes is of scientific and practical interest. A catalyst has been proposed that allows the dismutation reaction to be carried out in a wide range of temperatures and pressures. Both kinetic and thermodynamic data on the dependence of the rate of the dismutation reactions of trichlorosilane, dichlorosilane, and monochlorosilane on pressure were experimentally obtained. In addition, the dependence of saturated vapor pressure on temperature for monochlorosilane and dichlorosilane were also experimentally determined. Using the example of TCS, it was experimentally established that increasing the pressure to six atmospheres makes it possible to increase the specific productivity of the reactor by at least an order of magnitude due to the acceleration of the chemical reaction and the increase in the molar concentration of chlorosilanes in the vapor mixture. Consequently, it becomes possible to multiply the reactor’s load on the substance and, accordingly, the performance of the chlorosilane dismutation apparatus in general.

The transformation of organochlorine and organic impurities such as CCl₄, C₂H₂Cl₂, C₂HCl₃, C₂Cl₄, C₂H₂Cl₄, CH₄, C₃H₈, C₄H₁₀, and C₆H₆ in the content range of 10⁻²–10⁻⁶ wt.%, as well as BCl₃ impurities at the level of 3 × 10⁻² wt.%, was considered. A method has been developed for removing limiting impurities of carbon and boron during the process of the hydrogen reduction of silicon tetrachloride in a high-frequency arc gas discharge at atmospheric pressure. The thermodynamic and gas-dynamic analyses of the reduction process of silicon tetrachloride in hydrogen plasma, along with the behavior of organochlorine impurities, organic substances, and boron trichloride, was conducted. These analyses suggest that under equilibrium conditions, the conversion reactions of impurities result in the formation of silicon carbide and boron silicide. Potential chemical reactions for the conversion of the studied impurities into silicon carbide and boron silicide have been proposed. A new potential for plasma chemical processes has been identified, enabling the effective purification of chlorosilanes from both limiting and limited impurities. The results demonstrate the possibility of significantly reducing the concentrations of organochlorine and organic impurities, as well as boron trichloride, during the reduction of silicon tetrachloride in hydrogen plasma. The maximum conversion rates achieved included 99% for the organochlorine impurity CCl₄ to silicon carbide, 91% for benzene impurity to silicon carbide, and 86% for boron trichloride to boron silicide.