Transverse optical confinement in oxide-confined vertical-cavity surface-emitting lasers (VCSELs) crucially depends on thickness of oxide layer and its position relative to a standing wave. Modifying the structure reduces the overlap between the oxide layer and the standing wave as well as effective refractive index difference between core and cladding of the VCSEL that subsequently decreases of the number of transverse modes and increases the mode extension beyond oxide aperture. A 795 nm VCSEL is designed and fabricated with this concept. The proposed device achieves high single-mode operation of 4.1 mW at 80 °C, SMSR of 41.68 dB, and OPSR of 27.4 dB. VCSEL is applied in a nuclear magnetic resonance gyroscope (NMRG) system as pump source due to its excellent device performance and satisfactory test results are obtained.

We characterize laser generation in an ultralong air cavity (several meters in length) using an optical-pumped semiconductor gain chip for laser wireless charging applications. The study realizes laser generation in an external air cavity with a length of 200 cm, for the first time, and achieves a maximum output laser power of more than 86.3 mW. Furthermore, the laser oscillation can be maintained even when the output mirror of laser is off-axis within 1.6 cm. Thus, a long external cavity laser would ease the alignment between the laser beam and charging terminal, making it suitable for laser wireless charging applications.

In this study, we realize the high-power output of a single-mode 894 nm vertical-cavity surface-emitting laser (VCSEL) at high temperature. The effects of the dimensional parameters of oxide aperture and surface relief on the transverse mode and threshold gain of VCSEL were analyzed. Through collaborative optimization of the oxide aperture and relief, the VCSEL with 8 µm oxide aperture diameter and 5 µm surface relief inner diameter can operate at high temperature of 365 K with single-mode output power of 2.02 mW and side-mode suppression of 29.2 dB.

We demonstrate a narrow-linewidth, high side-mode suppression ratio (SMSR) semiconductor laser based on the external optical feedback injection locking technology of a femtosecond-apodized (Fs-apodized) fiber Bragg grating (FBG). A single frequency output is achieved by coupling and integrating a wide-gain quantum dot (QD) gain chip with a Fs-apodized FBG in a 1-μm band. We propose this low-cost and high-integration scheme for the preparation of a series of single-frequency seed sources in this wavelength range by characterizing the performance of 1030 nm and 1080 nm lasers. The lasers have a maximum SMSR of 66.3 dB and maximum output power of 134.6 mW. Additionally, the lasers have minimum Lorentzian linewidths that are measured to be 260.5 kHz; however, a minimum integral linewidth less than 180.4 kHz is observed by testing and analyzing the power spectra of the frequency noise values of the lasers.

In this paper, the wavelength current tuning characteristics of high-temperature-operation single-mode vertical-cavity surface-emitting lasers (VCSELs) for chip-scale atomic sensing systems are studied. Excellent wavelength current tuning robustness is helpful to improve the stability of atomic sensing systems. By optimizing the size of the oxide aperture combined with surface relief mode control technology, the single-mode VCSEL with an 8 µm oxide aperture can achieve 2.02 mW output power at 355 K, and the wavelength current tuning coefficient is ∼ 0.25 n m / m A . This excellent wavelength current tuning robustness results from the low active current density and device heat generation due to the optimized oxide aperture size.

Wireless charging systems are critical for safely and efficiently recharging mobile electronic devices. Current wireless charging technologies involving inductive coupling, magnetic resonance coupling, and microwave transmission are bulky, require complicated systems, expose users to harmful radiation, and have very short energy transmission distances. Herein, we report on a long-distance optical power transmission system by optimizing the external cavity structure of semiconductor lasers for laser charging applications. An ultra-long stable oscillating laser cavity with a transmission distance of 10 m is designed. The optimal laser cavity design is determined by simulating the structural parameters for stable operation, and an improved laser cavity that produces an output of 2.589 W at a transmission distance of 150 cm is fabricated. The peak power attenuation when the transmission distance increases from 50 to 150 cm is only approximately 6.4%, which proves that this wireless power transfer scheme based on a vertical external cavity surface-emitting laser can be used to realize ultra-long-distance power transmission. The proposed wireless energy transmission scheme based on a VECSEL laser is the first of its kind to report a 1.5 m transmission distance output power that exceeds 2.5 W. Compared with other wireless energy transmission technologies, this simple, compact, and safe long-distance wireless laser energy transmission system is more suitable for indoor charging applications.