The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

The aim of this study consists in investigating the effects of electrical and thermal stresses on SiC n-p-n bipolar junction transistors (BJTs). The stability of the electrical characteristics of BJTs is inspected under switching operation, DC operation, temperature cycling and continuous thermal stress up to 225°C. While switching operation and temperature cycling for several hours lead to significant changes at 25°C, the electrical characteristics were little degraded at high temperature. Besides, DC operation and continuous thermal stress did not result in significant degradation at all, both at room temperature and at high temperature.