Jingyang Ran received a B.E. degree in microelectronics science and engineering from Wuhan University, Wuhan, China, in 2018. He is currently pursuing an M.S. degree in microelectronics and solid-state electronics at Guizhou University, Guiyang, China.
His current research interests include 3D integration, TSV filling, Bonding reliability modeling, Electroplating, and Cu-Cu bonding.
Jingyang Ran received a B.E. degree in microelectronics science and engineering from Wuhan University, Wuhan, China, in 2018. He is currently pursuing an M.S. degree in microelectronics and solid-state electronics at Guizhou University, Guiyang, China.
His current research interests include 3D integration, TSV filling, Bonding reliability modeling, Electroplating, and Cu-Cu bonding.