Gold thin films were deposited on quartz substrates by DC magnetron sputtering to fabricate electrodes for electrochemical and resistive sensing applications. The influence of sputtering parameters on film thickness, structure, and electrical properties was systematically investigated. XRD analysis revealed a predominant (111) crystallographic orientation. Microstrain values, determined via Williamson–Hall (W–H) analysis, were low (below 0.013) and closely correlated with surface roughness trends. AFM measurements showed that the surface roughness increased with film thickness. Electrical resistivity decreased linearly with increasing thickness and exhibited a critical grain size of approximately 25 nm, beyond which conductivity improved markedly. These results demonstrate the strong dependence of Au thin-film morphology and performance on deposition conditions, offering practical guidelines for optimizing their application in functional sensing devices.

Gallium nitride (GaN) has emerged as one of the most promising wide-bandgap semiconductors for next-generation space photovoltaics. In contrast to conventional III–V compounds such as GaAs and InP, which are highly efficient under terrestrial conditions but suffer from radiation-induced degradation and thermal instability, GaN offers an exceptional combination of intrinsic material properties ideally suited for harsh orbital environments. Its wide bandgap, high thermal conductivity, and strong chemical stability contribute to superior resistance against high-energy protons, electrons, and atomic oxygen, while minimizing thermal fatigue under repeated cycling between extreme temperatures. Recent progress in epitaxial growth—spanning metal–organic chemical vapor deposition, molecular beam epitaxy, hydride vapor phase epitaxy, and atomic layer deposition—has enabled unprecedented control over film quality, defect densities, and heterointerface sharpness. At the device level, InGaN/GaN heterostructures, multiple quantum wells, and tandem architectures demonstrate outstanding potential for spectrum-tailored solar energy conversion, with modeling studies predicting efficiencies exceeding 40% under AM0 illumination. In this review article, the current state of knowledge on GaN materials and device architectures for space photovoltaics has been summarized, with emphasis placed on recent progress and persisting challenges. Particular focus has been given to defect management, doping strategies, and bandgap engineering approaches, which define the roadmap toward scalable and radiation-hardened GaN-based solar cells. With sustained interdisciplinary advances, GaN is anticipated to complement or even supersede traditional III–V photovoltaics in space, enabling lighter, more durable, and radiation-hard power systems for long-duration missions beyond Earth’s magnetosphere.

Zinc oxide, due to its unique physicochemical properties, including dual piezoelectric and semiconductive ones, demonstrates a high application potential in various fields, with a particular focus on nanotechnology. Among ZnO nanoforms, nanorods are gaining particular interest. Due to their ability to efficiently transport charge carriers and photoelectric properties, they demonstrate significant potential in energy storage and conversion, as well as photovoltaics. They can be prepared via various methods; however, most of them require large energy inputs, long reaction times, or high-cost equipment. Hence, new methods of ZnO nanorod fabrication are currently being sought out. In this paper, an ultrasound-supported synthesis of ZnO nanorods with zinc acetate as a zinc precursor has been described. The fabrication of nanorods included the treatment of the precursor solution with ultrasounds, wherein various sonication times were employed to verify the impact of the sonication process on the effectiveness of ZnO nanorod synthesis and the sizes of the obtained nanostructures. The morphology of the obtained ZnO nanorods was imaged via a scanning electron microscope (SEM) analysis, while the particle size distribution within the precursor suspensions was determined by means of dynamic light scattering (DLS). Additionally, the dynamic viscosity of precursor suspensions was also verified. It was demonstrated that ultrasounds positively affect ZnO nanorod synthesis, yielding longer nanostructures through even reactant distribution. Longer nanorods were obtained as a result of short sonication (1–3 min), wherein prolonged treatment with ultrasounds (4–5 min) resulted in obtaining shorter nanorods. Importantly, the application of ultrasounds increased particle homogeneity within the precursor suspension by disintegrating particle agglomerates. Moreover, it was demonstrated that ultrasonic treatment reduces the dynamic viscosity of precursor suspension, facilitating faster particle diffusion and promoting a more uniform growth of longer ZnO nanorods. Hence, it can be concluded that ultrasounds constitute a promising solution in obtaining homogeneous ZnO nanorods, which is in line with the principles of green chemistry.

In this work, we report on the fabrication of ZnO thin films doped with Ge via the ALD method. With an optimized amount of Ge doping, there was an improvement in the conductivity of the films owing to an increase in the carrier concentration. The optical properties of the films doped with Ge show improved transmittance and reduced reflectance, making them more attractive for opto-electronic applications. The band gap of the films exhibits a blue shift with Ge doping due to the Burstein–Moss effect. The variations in the band gap and the work function of ZnO depend strongly on the carrier density of the films. From the surface studies carried out using XPS, we could confirm that Ge replaces some of the Zn in the wurtzite structure. In the films containing Ge, the concentration of oxygen vacancies is also high, which is somehow related to the poor electrical properties of the films at higher Ge concentrations.

In the modern world, gas sensors play a crucial role in sectors such as high-tech industries, medicine, and environmental monitoring. Among these fields, oxygen sensors are the most important. There are several types of oxygen sensors, including optical, magnetic, Schottky diode, and resistive (or chemoresistive) ones. Currently, most oxygen-resistive sensors (ORSs) described in the literature are fabricated as thick layers, typically deposited via screen printing, and they operate at high temperatures, often exceeding 700 °C. This work presents a novel approach utilizing atomic layer deposition (ALD) to create very thin layers. Combined with appropriate doping, this method aims to reduce the energy consumption of the sensors by lowering both the mass requiring heating and the operating temperature. The device fabricated using the proposed process demonstrates a response of 88.21 at a relatively low temperature of 450 °C, highlighting its potential in ORS applications based on doped ALD thin films.

Space photovoltaics remains the primary power source for satellites and spacecraft, where high efficiency, radiation resistance, and low mass are essential requirements. While conventional III–V multijunction solar cells currently represent the technological benchmark, recent advances in materials science and device architectures have significantly expanded the design space of space photovoltaic systems. This review provides a comprehensive overview of the fundamental physical principles, material platforms, and device concepts relevant to photovoltaic operation under space conditions, with particular emphasis on the AM0 spectrum, radiation effects, and thermal cycling. Special attention is devoted to advanced architectures, including inverted metamorphic multijunction solar cells, concentrator photovoltaic systems, and emerging tandem concepts such as perovskite/silicon and all-perovskite devices. The review highlights the growing importance of system-level metrics, particularly specific power and integration flexibility, which increasingly complement efficiency as key performance indicators. Although emerging technologies offer unprecedented opportunities for lightweight and high-efficiency photovoltaic systems, challenges related to long-term stability, defect control, and scalability remain critical for their practical implementation. Overall, the future of space photovoltaics lies in the development of application-specific solutions that balance efficiency, durability, mass, and cost, enabling next-generation space missions and energy systems.