In the modern world, gas sensors play a crucial role in sectors such as high-tech industries, medicine, and environmental monitoring. Among these fields, oxygen sensors are the most important. There are several types of oxygen sensors, including optical, magnetic, Schottky diode, and resistive (or chemoresistive) ones. Currently, most oxygen-resistive sensors (ORSs) described in the literature are fabricated as thick layers, typically deposited via screen printing, and they operate at high temperatures, often exceeding 700 °C. This work presents a novel approach utilizing atomic layer deposition (ALD) to create very thin layers. Combined with appropriate doping, this method aims to reduce the energy consumption of the sensors by lowering both the mass requiring heating and the operating temperature. The device fabricated using the proposed process demonstrates a response of 88.21 at a relatively low temperature of 450 °C, highlighting its potential in ORS applications based on doped ALD thin films.

This study examines the influence of device architecture and substrate materials on the external quantum efficiency (EQE) of high-performance solar cells. A diverse array of photovoltaic technologies was evaluated, including formamidinium lead iodide CH₅N₂PbI₃ (FAPI) perovskite cells and various silicon-based designs, such as Passivated Emitter and Rear Cell (PERC), Back Integrated Contact (BIC), and Bifacial structures. Quantum characteristics were determined through wavelength-dependent photocurrent measurements utilizing a precision monochromator system. Our results reveal that device structure is a primary determinant of charge carrier collection efficiency; specifically, Bifacial and PERCs achieved superior short-circuit current densities (J_sc) of 40.98 mA/cm² and 39.42 mA/cm², respectively. Notably, the EQE(λ) profile of Bifacial cells under n-side illumination exhibits a near-ideal rectangular shape, indicating an optimized spectral response throughout the operating spectrum. Furthermore, the analysis investigates the role of surface recombination velocity and the efficacy of advanced passivation layers—specifically Al₂O₃ and SiN_x—in enhancing quantum performance by mitigating recombination state density. Our findings demonstrate that the strategic integration of advanced passivation layers (Al₂O₃ and SiN_x) with optimized architectures, such as PERC and Bifacial designs, is paramount for maximizing charge carrier collection and achieving record-high current densities reaching 40.98 mA/cm². A comprehensive analysis of solar cell performance involves spectral response (SR) and external quantum efficiency (EQE) as functions of wavelength. Additionally, SR-based current density analysis enables more accurate evaluation of cell parameters than standard I–V characterization.