Perovskite solar cells (PSCs) have attracted increasing research interest, but their performance depends on both the choice of materials and the process used. The materials can typically be treated in solution, which makes them well suited for roll-to-roll processing methods, but their deposition under ambient conditions requires overcoming some challenges to improve stability and efficiency. In this review, we highlight the latest advancements in photonic curing (PC) for perovskite materials, as well as for hole transport layer (HTL) and electron transport layer (ETL) materials. We present how PC parameters can be used to control the optical, electrical, morphological, and structural properties of perovskite HTL and ETL layers. Emphasizing the significance of these advancements for perovskite solar cells could further highlight the importance of this research and underline its essential role in creating more efficient and sustainable solar technology.

Wide-bandgap tin oxide (${\mathrm{SnO}}_2$) thin-films are frequently used as an electron-transporting layers in perovskite solar cells due to their superior thermal and environmental stabilities. However, its crystallization by conventional thermal methods typically requires high temperatures and long periods of time. These post-processing conditions severely limit the choice of substrates and reduce the large-scale manufacturing capabilities. This work describes the intense-pulsed-light-induced crystallization of ${\mathrm{SnO}}_2$ thin-films using only 500 $\mathsf{\mu }\mathrm{s}$ of exposure time. The thin-films’ properties are investigated using both impedance spectroscopy and photoconductivity characteristic measurements. A Nyquist plot analysis establishes that the process parameters have a significant impact on the electronic and ionic behaviors of the ${\mathrm{SnO}}_2$ films. Most importantly, we demonstrate that light-induced crystallization yields improved topography and excellent electrical properties through enhanced charge transfer, improved interfacial morphology, and better ohmic contact compared to thermally annealed (TA) ${\mathrm{SnO}}_2$ films.

Solution-based inorganic–organic halide perovskites are of great interest to researchers because of their unique optoelectronic properties and easy processing. However, polycrystalline perovskite films often show inhomogeneity due to residual strain induced during the film’s post-processing phase. In turn, these strains can impact both their stability and performance. An exhaustive study of residual strains can provide a better understanding and control of how they affect the performance and stability of perovskite films. In this work, we explore this complex interrelationship between residual strains and electrical properties for methylammonium ${\mathrm{CH}}_3{\mathrm{NH}}_3{\mathrm{PbI}}_{3-\mathrm{x}}{\mathrm{Cl}}_{\mathrm{x}}$ films using grazing incidence X-ray diffraction (GIXRD). We correlate their resistivity and carrier mobility using the Hall effect. The ${\sin }^2\left(\psi \right)$ technique is used to optimize the annealing parameters for the perovskite films. We also establish that temperature-induced relaxation can yield a significant enhancement of the charge carrier transports in perovskite films. Finally, we also use Raman micro-spectroscopy to assess the degradation of perovskite films as a function of their residual strains.

The most common method of processing metal oxide and perovskite thin films in the laboratory is thermal annealing (TA), which is a constraint for the commercialization of large-scale perovskite solar cells. Here, we present a photonic curing (PC) process to produce fully photonically annealed perovskite cells—a fast process with well-controlled, short light pulses—to develop perovskite photovoltaic devices with high efficiency. We also demonstrate how to use the parameters of the photonic annealing system to control the optical, electrical, morphological, and structural properties of perovskite layers for photovoltaic device applications. The effect of PC treatment on the microstructure, granularity, and electronic properties was studied by scanning electron microscopy (SEM), photoluminescence (PL), and transient photocurrent (TPC). The degree of conversion of the perovskite precursor and its influence on the electronic structure have been identified. $\mathrm{S}\mathrm{n}{\mathrm{O}}_2$ and perovskite films were treated with a single pulse and produced PCE comparable to control samples treated by TA.

The most common method of processing metal oxide and perovskite thin films in the laboratory is thermal annealing (TA), which is a constraint for the commercialization of large-scale perovskite solar cells. Here, we present a photonic curing (PC) process to produce fully photonically annealed perovskite cells - a fast process with well-controlled, short light pulses - to develop perovskite photovoltaic devices with high efficiency. We have also demonstrated how to use the parameters of the photonic annealing system to control the optical, electrical, morphological, and structural properties of perovskite layers for photovoltaic device applications. The effect of PC treatment on microstructure, granularity, and electronic properties was studied by scanning electron microscopy (SEM), photoluminescence (PL), and transient photocurrent (TPC). The degree of conversion of the perovskite precursor and its influence on the electronic structure have been identified. SnO2 and perovskite films were treated with a single pulse and produced PCE comparable to control samples treated by TA.

In this study, we have fabricated and characterized three different configurations of photodetectors with digital inkjet printing techniques on different types of silicon substrates, such as pristine n-type silicon and chemically nanostructured n-type silicon, with and without Ag nanoparticle-induced surface-plasmon enhancement. Among these three comparison batches, digitally printed devices on chemically nanostructured n-type silicon with Ag nanoparticle-induced enhancement yield the highest photocurrent enhancement factor of 920×, the lowest rise and decay times of τr = 176 ms and τd = 98 ms, respectively, and the highest responsivity of 24.8 mA W−1 at wavelengths ranging from 380 to 700 nm. Most importantly, we demonstrate that these devices are highly stable after fabrication, losing less than 3% of their efficiency over 60 days under ambient conditions. We firmly believe that this simple device architecture and effective digital fabrication process are most promising for the realization of efficient, stable, and low-cost photodetectors fabricated at large scales.