The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 10⁶ at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ~ 500 μm² are used. When using this area, the responsivities are 16-20 kA/W.

Colloidal nanoparticles, and quantum dots in particular, are a new class of materials that can significantly improve the functionality of photonics, electronics, sensor devices, etc. The main challenge addressed in the article is modification of the syntheses of colloidal NP to launch them into mass production. It is proposed to use an additive printing method of chips for microfluidic synthesis, and it is shown that our approach allows to offer a cheap, easily scalable and automated synthesis method which allows to increase the product yield up to 60% with improved optical properties of ${\mathrm{AgInS}}_2$ quantum dots.

This paper presents a comprehensive study focusing on the detection and characterization of droplets with volumes in the nanoliter range. Leveraging the precise control of minute liquid volumes, we introduced a novel spectroscopic on-chip microsensor equipped with integrated microfluidic channels for droplet generation, characterization, and sensing simultaneously. The microsensor, designed with interdigitated ring-shaped electrodes (IRSE) and seamlessly integrated with microfluidic channels, offers enhanced capacitance and impedance signal amplitudes, reproducibility, and reliability in droplet analysis. We were able to make analyses of droplet length in the range of 1.0–6.0 mm, velocity of 0.66–2.51 mm/s, and volume of 1.07 nL–113.46 nL. Experimental results demonstrated that the microsensor’s performance is great in terms of droplet size, velocity, and length, with a significant signal amplitude of capacitance and impedance and real-time detection capabilities, thereby highlighting its potential for facilitating microcapsule reactions and enabling on-site real-time detection for chemical and biosensor analyses on-chip. This droplet-based microfluidics platform has great potential to be directly employed to promote advances in biomedical research, pharmaceuticals, drug discovery, food engineering, flow chemistry, and cosmetics.

A new Pb-free glass containing several oxides (Bi₂O₃, B₂O₃, SiO₂, Al₂O₃ and ZnO) with sintering temperature reduced down to 600 °C has been developed for applications in a piezoresistive pressure sensor. Using this low sintering temperature glass, it was possible to fabricate micrographite-based pastes and piezoresistive films without losses of graphitic material during the sintering. Good adherence of the films onto alumina substrates was observed and attributed in part to the reactions of ZnO and Bi₂O₃ with alumina substrates. Piezoresistive films with uniformly distributed micrographite particles were produced using sodium carboxymethyl cellulose (NaCMC) in aqueous solutions during the preparation of pastes. NaCMC plays a decisive role in interactions between micrographite particles and glassy matrix, providing good wettability of glass powder particles and homogeneous distribution of MG particles in the pastes. Finally, excellent repeatability of the sensor response to the applied deformations was verified in cycling experiments when the sample was submitted to 1000 load/release cycles. These results demonstrated very high stability of the sensor response (within ±1%), and also evidenced high stability of the film under the cyclic strain loads and good film adherence to the substrate.

An AlGaAs/GaAs nan heterojunction bipolar transistor (HBT) laser driver circuit and a pseudomorphic InGaAs/GaAs/AlGaAs graded index single-quantum-well (SQW) laser have been laterally integrated to maintain surface planarity using selective organometallic vapor-phase epitaxy (OMVPE) regrowth of the HBT. The self-aligned HBTs exhibit a DC current gain of 30 and an f/sub t/ (f/sub max/) of 45(60) GHz. The 980-nm lasers exhibit room-temperature threshold current densities as low as 420