The radiation-induced optical absorption at 1.5–5.5 eV (up to the beginning of fundamental absorption) has been analyzed in CVD diamond disks exposed to 231-MeV ¹³²Xe ions with four fluences from 10¹² to 3.8 × 10¹³ cm⁻². The 5 mm diameter samples (thickness 0.4 mm) were prepared by Diamond Materials, Freiburg (Germany); the average grain size at growth site was around 80 μm; and the range of xenon ions was R = 11.5 μm. The intensity of several bands grows with ion fluence, thus confirming the radiation-induced origin of the defects responsible for these bands. The recovery of radiation damage has been investigated via isochronal (stepwise) thermal annealing procedure up to 650 °C, while all spectra were measured at room temperature. Based on these spectra, the annealing kinetics of several defects, in particular carbon vacancies (GR1 centers with a broad band ~2 eV) and complementary C-interstitial-related defects (~4 eV), as well as impurity-related complex defects (narrow bands around 2.5 eV) have been constructed. The experimental kinetics have also been analyzed in terms of the diffusion-controlled bimolecular reactions. The migration energies of tentatively interstitial atoms (mobile components in recombination process) are obtained, and their dependence on the irradiation fluences is discussed.

The impact of 230-MeV Xe¹³² ion irradiation on the structural, optical, and luminescent properties of YAG:Ce single crystals is investigated over a fluence range of 10¹¹–10¹⁴ ions/cm². Optical absorption; cathodo-, X-ray, and photoluminescence; and X-ray diffraction are employed to analyze radiation-induced changes. Irradiation leads to the formation of Frenkel (F, F⁺) and antisite defects and attenuates Ce³⁺ emission (via enhanced nonradiative processes and Ce³⁺ → Ce⁴⁺ recharging). A redistribution between the fast and slow components of the Ce³⁺-emission is considered. Excitation spectra show the suppression of exciton-related emission bands, as well as a shift of the excitation onset due to increased lattice disorder. XRD data confirm partial amorphization and a high level of local lattice disordering, both increasing with irradiation fluence. These findings provide insight into radiation-induced processes in YAG:Ce, which are relevant for its application in radiation–hard scintillation detectors.

The radiation-induced optical absorption at 1.5-5.5 eV (up to the beginning of fundamental absorption) has been analyzed in CVD diamond disks exposed to 231-MeV 132Xe ions with four fluences from 1012 to 3.81013 cm-2. The 5-mm diameter samples (thickness 0.4 mm) were prepared by Diamond Materials, Freiburg (Germany), average grain size at growth site was around 80 m, the range of xenon ions was R= 11.5 m. The intensity of several bands grows with ion fluence thus confirming radiation-induced origin of the defects responsible for these bands. The recovery of radiation damage has been investigated via isochronal (stepwise) thermal annealing procedure up to 650°C, while all spectra were measured at room temperature. Based on these spectra, the annealing kinetics of several defects, in particular carbon vacancies (GR1 centers with a broad band 2 eV) and complementary C-interstitial-related defects ( 4 eV), as well as vacancies located nearby nitrogen substitutional atoms (narrow bands around 2.5 eV) have been constructed. The experimental kinetics have also been analyzed in terms of the diffusion-controlled bimolecular reactions. The migration energies of tentatively interstitial atoms (mobile components in recombination process) are obtained, their dependence on the irradiation fluences is discussed.

The recovery of radiation damage induced by 231-MeV xenon ions with varying fluence (from 5 × 10¹¹ to 2 × 10¹⁴ cm⁻²) in α-Al₂O₃ (corundum) single crystals has been studied by means of isochronal thermal annealing of radiation-induced optical absorption (RIOA). The integral of elementary Gaussians (product of RIOA spectrum decomposition) OK has been considered as a concentration measure of relevant oxygen-related Frenkel defects (neutral and charged interstitial-vacancy pairs, F-H, F⁺-H⁻). The annealing kinetics of these four ion-induced point lattice defects has been modelled in terms of diffusion-controlled bimolecular recombination reactions and compared with those carried out earlier for the case of corundum irradiation by fast neutrons. The changes in the parameters of interstitial (mobile component in the recombination process) annealing kinetics—activation energy E and pre-exponential factor X—in ion-irradiated crystals are considered.