We report a two-step growth process of MoS₂ nanoflakes using a low-pressure chemical vapor deposition technique. In the first step, a MoS₂ layer was synthesized on a c-plane sapphire substrate. This layer was subsequently re-evaporated at a higher temperature to form mono- or few-layer MoS₂ flakes. As a result, the close proximity re-evaporation enabled the growth of pristine MoS₂ nanoflakes. Atomic force microscopy analysis confirmed the synthesis of nanoclusters/nanoflakes with lateral dimensions of over 10 μm and a flake height of approximately 1.3 nm, demonstrating bi-layer MoS₂, whereas transmission electron microscopy analysis revealed triangular MoS₂ nanoflakes, with a diffraction pattern proving the presence of single crystalline hexagonal MoS₂. Raman data revealed the typical modes of high-quality MoS₂ nanoflakes. Finally, we presented the photocurrent dependence of a MoS₂-based photoresist under illumination with light-emitting diode of 405 nm wavelength. The measured current–voltage dependence across various luminous flux outlined the sensitivity of MoS₂ to polarized light and thus opens further opportunities for applications in high-performance photodetectors with polarization sensitivity.

This study reports the successful fabrication and characterization of two-dimensional (2D) vertical heterostructures composed of a semiconducting molybdenum disulfide (MoS₂) layer stacked with semimetallic platinum dichalcogenides (PtSe₂ and PtTe₂). The heterostructures were created using a versatile fabrication method that combines chemical vapor deposition (CVD) to grow high-quality MoS₂ nanolayers with thermally assisted conversion (TAC) for the synthesis of the Pt-based layers. The final MoS₂/PtSe₂ and MoS₂/PtTe₂ heterostructures were then assembled via a dry transfer process, ensuring high structural integrity. The quality and properties of these heterostructures were investigated using a range of advanced spectroscopic techniques. Raman spectroscopy confirmed the presence of characteristic vibrational modes for each material, validating successful formation. X-ray photoelectron spectroscopy (XPS) analysis further confirmed the elemental composition and oxidation states, though it also revealed the presence of elemental Pt⁰ and oxidized Te⁺⁴ in the PtTe₂ layer, suggesting an incomplete conversion. Importantly, the photoluminescence (PL) spectra showed a significant quenching effect, a clear sign of strong interlayer charge transfer, which is essential for optoelectronic applications. Finally, UV-Vis-NIR spectrophotometry demonstrated the combined optical properties of the stacked layers, with the Pt-based layers causing broadening and a blue-shift in the MoS₂ exciton peaks, indicating altered electronic and optical behavior. This research provides valuable insights into the synthesis and fundamental properties of MoS₂/PtX₂ heterostructures, highlighting their potential for next-generation electronic and optoelectronic devices.