In this paper, aluminum-doped zinc oxide (ZnO:Al or AZO) thin films are grown using atomic layer deposition (ALD) and the influence of postdeposition UV–ozone and thermal annealing treatments on the films’ properties are investigated. X-ray diffraction (XRD) revealed a polycrystalline wurtzite structure with a preferable (100) orientation. The crystal size increase after the thermal annealing is observed while UV–ozone exposure led to no significant change in crystallinity. The results of the X-ray photoelectron spectroscopy (XPS) analyses show that a higher amount of oxygen vacancies exists in the ZnO:Al after UV–ozone treatment, and that the ZnO:Al, after annealing, has a lower amount of oxygen vacancies. Important and practical applications of ZnO:Al (such as transparent conductive oxide layer) were found, and its electrical and optical properties demonstrate high tunability after postdeposition treatment, particularly after UV–Ozone exposure, offers a noninvasive and easy way to lower the sheet resistance values. At the same time, UV–Ozone treatment did not cause any significant changes to the polycrystalline structure, surface morphology, or optical properties of the AZO films.

We report a two-step growth process of MoS₂ nanoflakes using a low-pressure chemical vapor deposition technique. In the first step, a MoS₂ layer was synthesized on a c-plane sapphire substrate. This layer was subsequently re-evaporated at a higher temperature to form mono- or few-layer MoS₂ flakes. As a result, the close proximity re-evaporation enabled the growth of pristine MoS₂ nanoflakes. Atomic force microscopy analysis confirmed the synthesis of nanoclusters/nanoflakes with lateral dimensions of over 10 μm and a flake height of approximately 1.3 nm, demonstrating bi-layer MoS₂, whereas transmission electron microscopy analysis revealed triangular MoS₂ nanoflakes, with a diffraction pattern proving the presence of single crystalline hexagonal MoS₂. Raman data revealed the typical modes of high-quality MoS₂ nanoflakes. Finally, we presented the photocurrent dependence of a MoS₂-based photoresist under illumination with light-emitting diode of 405 nm wavelength. The measured current–voltage dependence across various luminous flux outlined the sensitivity of MoS₂ to polarized light and thus opens further opportunities for applications in high-performance photodetectors with polarization sensitivity.