In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium tin oxide (ITO) thin films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed ITO films annealed at 400 °C, 600 °C and 800 °C are determined in the frequency range of 0.2 to 1.0 THz. The transmittance can be changed from ~27% for as-deposited to ~10% and ~39% for ITO films heat-treated at different annealing temperatures (T_a’s). Such variations of optical properties in the far infrared for the samples under study are correlated with their mobility and carrier concentration, which are extracted from Drude–Smith modeling of THz conductivity with plasma frequency, scattering time and the c-parameters as fitting parameters. Resistivities of the films are in the range of 10⁻³ to 10⁻⁴ Ω-cm, confirming that annealed ITO films can potentially be used as transparent conducting electrodes for photonic devices operating at THz frequencies. The highest mobility, μ = 47 cm²/V∙s, with carrier concentration, N_c = 1.31 × 10²¹ cm⁻³, was observed for ITO films annealed at T_a = 600 °C. The scattering times of the samples were in the range of 8–21 fs, with c-values of −0.63 to −0.87, indicating strong backscattering of the carriers, mainly by grain boundaries in the polycrystalline film. To better understand the nature of these films, we have also characterized the surface morphology, microscopic structural properties and chemical composition of as-deposited and RTA-processed ITO thin films. For comparison, we have summarized the optical properties of ITO films sputtered onto fused silica substrates, as-deposited and RTA-annealed, in the visible transparency window of 400–800 nm. The optical bandgaps of the ITO thin films were evaluated with a Tauc plot from the absorption spectra.

We investigate terahertz time-domain spectroscopy (THz-TDS) as a non-destructive and non-contact technique for depth profiling of dopants in semiconductors. THz temporal waveforms transmitted through silicon-ion-implanted semi-insulating gallium arsenide substrates, as-implanted or post-annealed by rapid thermal annealing, were analyzed by assuming a multi-layered Gaussian refractive index profile in the ∼sub-micrometer-thick implantation region. The implantation energy and dosages in this work were 200 KeV, 10¹⁴, 5 × 10¹⁴, and 10¹⁵ ions/cm², respectively. The average values of real (n) and imaginary (κ) parts of refractive indices of an as-implanted sample in the depth range of 0–800 nm are 5.8 and 0.7, respectively, at 0.5 THz and are 6.2 and 0.2, respectively, at 1 THz. On the other hand, the refractive index profile of the post-annealed samples displays a prominent Gaussian-like form, and peak refractive indices (n ∼ 25 and κ ∼ 32.7 at 0.5 THz and n, κ ∼17 at 1 THz) were found to be at the depth of 210 nm. Reconstructed dopant profiles in as-implanted, implanted, and post-annealed substrates were found to be in good agreement with measurements by secondary ion mass spectroscopy as well as simulation by the Monte Carlo method. We were also able to determine accurately the projected range (R_p), straggle (R_s), and concentration of dopants by the analysis of THz-TDS data. The spatial resolution, along the depth direction, of the THz-TDS technique for depth profiling of dopants was estimated to be as small as 8-nm. This work suggests the feasibility of using THz-TDS for nondestructive and non-contact diagnostics for profiling dopants in semiconductors.

In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium-tin-oxide (ITO) thin-films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed ITO films annealed at 400°C, 600°C and 800°C are determined in the frequency range of 0.2 to 1.0 THz. The transmittance can be changed from ~ 27% for as-deposited to ~ 10% and ~ 39% for ITO films heat-treated at different annealing temperatures, T_a’s. Such variations of optical properties in the far infrared for the samples under study are correlated with their mobility and carrier concentration, which are extracted from Drude-Smith modeling of THz conductivity with plasma frequency, scattering time and the c-parameters as fitting parameters. Resistivities of the films are in the range of 10^-3 to 10^-4 W-cm, confirming that annealed ITO films can potentially be used as transparent conducting electrodes for photonic devices operating at THz frequencies. The highest mobility, m = 47 cm²/V∙s, with carrier concentration, N_c = 1.31´10²¹ cm^-3, was observed for ITO films annealed at T_a = 600°C. The scattering times of the samples were in the range of 8 – 21 fs, with c-values of -0.63 to -0.87, indicating strong back scattering of the carriers, mainly by grain boundaries in the polycrystalline film. To better understand the nature of these films, we have also characterized the surface morphology, microscopic structural properties and chemical composition of as-deposited and RTA-processed ITO thin-films. For comparison, we have summarized the optical properties of ITO films sputtered on fused silica substrates, as-deposited and RTA-annealed, in the visible transparency window of 400-800nm. The optical bandgaps of the ITO thin films were evaluated with a Tauc plot from the absorption spectra.