We show that an individual droplet of liquid metal can be a source of coherent terahertz radiation when it is excited by two femtosecond laser pulses of the same frequency. Under certain delays between these pulses, the intensity of terahertz radiation increases by more than 3 orders of magnitude. We describe the experimental results with the model of dynamic gain control, which considers the interaction of both laser pulses with the droplet and explains the terahertz-generation process by taking into account the dynamics of electrons and ions after photoionization of the metal droplet. The spatial distribution of terahertz radiation has a forward-directed contribution, whose polarization properties are well described by a nonlinear susceptibility of the second order. Our theoretical estimations based on the experimental data show that under the dynamic gain control the observed terahertz output can be considerably increased. Joint generation of x-ray, ultraviolet, and, as shown in the present work, terahertz radiation allows one to forecast that a free-falling photoexcited droplet of liquid metal is a promising source of multifrequency electromagnetic radiation for extreme nonlinear laser science.

In this review, we present a survey on the use of molecular nonlinear crystals in the context of terahertz (THz) photonics. The fundamentals of nonlinear optics for converting optical and infrared radiation into THz radiation with the basic theory of femtosecond optical rectification and difference frequency generation are described. Various types of phase-matching conditions that can be achieved in molecular crystals are discussed. It is shown that one of the unique features of molecular crystals is the ability to generate tunable narrowband terahertz radiation using femtosecond lasers. We also provide a detailed description of the most commonly used and promising molecular crystals such as DAST, DSTMS, OH1, HMQ-TMS, DCMBI, and GUHP. This review also presents a description of recent publications which show the prospects of using molecular nonlinear optical crystals in THz photonics.

In this paper, we study terahertz generation through optical rectification in reflection at normal incidence in a dielectric nonlinear crystal. We first analyze, with a nonlinear optical model, the sample parameters (thickness, absorption at both laser and terahertz wavelengths, etc.) for which a terahertz optical rectification reflection scheme is preferable to the common transmission scheme. Then, we report our experimental observations of a reflected terahertz signal generated at the surface of a ZnTe crystal. The reflected terahertz signal shares all the characteristics of a signal generated in transmission but is not limited by absorption losses in the crystal, thereby providing a broader bandwidth. At high pump laser power, the signal exhibits saturation, which is caused by the decrease of the nonlinear susceptibility due to photocarriers generated by two-photon absorption. This reflection scheme could be of great importance for terahertz microscopy of opaque materials like, e.g., humid samples or samples exhibiting strong absorption bands or to study samples for which the transmitted signal cannot be recorded.

We investigate terahertz time-domain spectroscopy (THz-TDS) as a non-destructive and non-contact technique for depth profiling of dopants in semiconductors. THz temporal waveforms transmitted through silicon-ion-implanted semi-insulating gallium arsenide substrates, as-implanted or post-annealed by rapid thermal annealing, were analyzed by assuming a multi-layered Gaussian refractive index profile in the ∼sub-micrometer-thick implantation region. The implantation energy and dosages in this work were 200 KeV, 10¹⁴, 5 × 10¹⁴, and 10¹⁵ ions/cm², respectively. The average values of real (n) and imaginary (κ) parts of refractive indices of an as-implanted sample in the depth range of 0–800 nm are 5.8 and 0.7, respectively, at 0.5 THz and are 6.2 and 0.2, respectively, at 1 THz. On the other hand, the refractive index profile of the post-annealed samples displays a prominent Gaussian-like form, and peak refractive indices (n ∼ 25 and κ ∼ 32.7 at 0.5 THz and n, κ ∼17 at 1 THz) were found to be at the depth of 210 nm. Reconstructed dopant profiles in as-implanted, implanted, and post-annealed substrates were found to be in good agreement with measurements by secondary ion mass spectroscopy as well as simulation by the Monte Carlo method. We were also able to determine accurately the projected range (R_p), straggle (R_s), and concentration of dopants by the analysis of THz-TDS data. The spatial resolution, along the depth direction, of the THz-TDS technique for depth profiling of dopants was estimated to be as small as 8-nm. This work suggests the feasibility of using THz-TDS for nondestructive and non-contact diagnostics for profiling dopants in semiconductors.