Printed organic and inorganic electronics continue to be of large interest for sensors, bioelectronics, and security applications. Many printing techniques have been investigated, albeit often with typical minimum feature sizes in the tens of micrometer range and requiring post-processing procedures at elevated temperatures to enhance the performance of functional materials. Herein, we introduce laser printing with three different inks, for the semiconductor ZnO and the metals Pt and Ag, as a facile process for fabricating printed functional electronic devices with minimum feature sizes below 1 µm. The ZnO printing is based on laser-induced hydrothermal synthesis. Importantly, no sintering of any sort needs to be performed after laser printing for any of the three materials. To demonstrate the versatility of our approach, we show functional diodes, memristors, and a physically unclonable function based on a 6 × 6 memristor crossbar architecture. In addition, we realize functional transistors by combining laser printing and inkjet printing.

Modern society is striving for digital connectivity that demands information security. As an emerging technology, printed electronics is a key enabler for novel device types with free form factors, customizability, and the potential for large-area fabrication while being seamlessly integrated into our everyday environment. At present, information security is mainly based on software algorithms that use pseudo random numbers. In this regard, hardware-intrinsic security primitives, such as physical unclonable functions, are very promising to provide inherent security features comparable to biometrical data. Device-specific, random intrinsic variations are exploited to generate unique secure identifiers. Here, we introduce a hybrid physical unclonable function, combining silicon and printed electronics technologies, based on metal oxide thin film devices. Our system exploits the inherent randomness of printed materials due to surface roughness, film morphology and the resulting electrical characteristics. The security primitive provides high intrinsic variation, is non-volatile, scalable and exhibits nearly ideal uniqueness.

Motivated by activities of several experimental groups we investigate electron transport through two coherent, strongly coupled quantum dots (“double quantum dots”), taking into account both intra- and inter-dot Coulomb interactions. The shot noise in this system is very sensitive to the internal electronic level structure of the coupled dot system and its specific coupling to the electrodes. Accordingly a comparison between experiments and our predictions should allow for a characterization of the relevant parameters. We discuss in detail the effect of asymmetries, either asymmetries in the couplings to the electrodes or a detuning of the quantum dot levels out of resonance with each other. In the Coulomb blockade region super-Poissonian noise appears even for symmetric systems. For bias voltages above the sequential tunneling threshold super-Poissonian noise and regions of negative differential conductance develop if the symmetry is broken sufficiently strongly.

With respect to efficient use of diminishing or harder to reach energy resources, the catalysis of processes that will otherwise require high overpotentials is a very important application in today's world. As a newly developed class of materials, high‐entropy sulfides (HESs) are promising electrocatalysts for a variety of different reactions. In this report, HESs containing five or six transition metals are synthesized in a one‐step mechanochemical process. Seven HESs of Pnma (M:S≈1:1) and three Pa‐3 (M:S = 1:2) structures are investigated as electrocatalysts for the oxygen evolution reaction (OER). The performances and properties of the HESs with different compositions and structures are compared with each other and with commercial IrO₂ as reference material, in terms of OER overpotential, Tafel slope, electrochemically active surface area, ionic conductivity, and durability. The structural and chemical properties of these HESs are determined by X‐ray diffraction, transmission electron microscopy, scanning electron microscopy, X‐ray photoelectron spectroscopy, and energy‐dispersive X‐ray spectroscopy. Most of the HESs show excellent and promising performance as OER electrocatalysts under alkaline conditions, and outperform the reference OER catalyst IrO₂.

High‐throughput (HT) synthesis and HT characterization techniques are becoming increasingly important due to the ever‐increasing complexity of materials and applications of advanced functional compounds. This work reports on the high‐throughput compilation of material libraries of high‐entropy oxides with fluorite crystal structure and tunable band gaps to be used as, e.g., semiconductors for photovoltaic applications. The material libraries cover the high‐entropy range of rare‐earth oxides with 5, 6, and 7 different cations (Ce, La, Sm, Pr, Tb, Y, and Zr) in near equimolar concentrations, but also the medium entropy range with 4 cations. The atmosphere used during or after synthesis is found to have a large effect on the band gap of these materials. Multivalent rare‐earth cations such as Ce/Pr/Tb enable reversible tuning of the band gap between 2.0 and 3.5 eV upon calcination under various oxidizing and reducing atmospheres. The high‐entropy fluorite oxides with smaller band gaps exhibit high electron mobility and transport energy levels compatible with common solar cell architectures.