Zero-dimensional (0D) tin halide perovskites feature extraordinary properties, such as broadband emission, high photoluminescence quantum yield, and self-absorption-free characteristics. The innovation of synthesis approaches for high-quality 0D tin halide perovskites has facilitated the flourishing development of perovskite-based optoelectronic devices in recent years. However, discovering an effective strategy to further enhance their emission efficiency remains a considerable challenge. Herein, we report a unique strategy employing rapid heat treatment to attain efficient self-trapped exciton (STE) emission in Cs₄SnBr₆ zero-dimensional perovskite. Compared to the pristine Cs₄SnBr₆, rapid thermal treatment (RTT) at 200 °C for a duration of 120 s results in an augmented STE emission with the photoluminescence (PL) quantum yield rising from an initial 50.1% to a substantial 64.7%. Temperature-dependent PL spectra analysis, Raman spectra, and PL decay traces reveal that the PL improvement is attributed to the appropriate electron–phonon coupling as well as the increased binding energies of STEs induced by the RTT. Our findings open up a new avenue for efficient luminescent 0D tin-halide perovskites toward the development of efficient optoelectronic devices based on 0D perovskites.

Zero-dimensional tin-based halide perovskites have garnered considerable interest owing to their remarkable optical properties, including broad-band emission, high photoluminescence (PL) efficiency, and low self-absorption. Nevertheless, enhancing the PL efficiency and stability of these materials remains a pressing challenge. In this study, the enhancement of PL and stability in Cs₄SnBr₆ zero-dimensional perovskite was investigated through Ce³⁺ doping. Our experimental results demonstrate that the incorporation of Ce³⁺ can significantly boost the light emission intensity from self-trapped excitons (STEs) in Cs₄SnBr₆, achieving over a 150% increase compared to the undoped sample, with a PL quantum yield of approximately 64.7%. Moreover, the thermal stability of the corresponding doped sample is markedly enhanced. Through comprehensive analyses, including X-ray diffraction, energy-dispersive spectroscopy, time-resolved PL, and temperature-dependent PL measurements, we elucidate that the enhanced light emission is attributed to the distortion of the [SnBr₆]⁴⁻ octahedral structure induced by Ce³⁺ doping, which strengthens electron–phonon coupling and elevates the binding energy of STEs.

We report a rapid synthesis method for producing CsSnCl₃:Mn²⁺ perovskites, derived from SnF₂, and investigate the effects of rapid thermal treatment on their photoluminescence properties. Our study shows that the initial CsSnCl₃:Mn²⁺ samples exhibit a double luminescence peak structure with PL peaks at approximately 450 nm and 640 nm, respectively. These peaks originate from defect-related luminescent centers and the 4T¹→6A¹ transition of Mn²⁺. However, as a result of rapid thermal treatment, the blue emission is significantly reduced and the red emission intensity is increased nearly twofold compared to the pristine sample. Furthermore, the Mn²⁺-doped samples demonstrate excellent thermal stability after the rapid thermal treatment. We suggest that this improvement in photoluminescence results from enhanced excited-state density, energy transfer between defects and the Mn²⁺ state, as well as the reduction of nonradiative recombination centers. Our findings provide valuable insights into the luminescence dynamics of Mn²⁺-doped CsSnCl₃ and open up new possibilities for controlling and optimizing the emission of rare-earth-doped CsSnCl₃.

Zero-dimensional (0D) tin halide perovskites have emerged as promising luminescent materials owing to their broadband emission, high quantum yield, and negligible self-absorption. Yet, their luminescence efficiency and stability remain insufficient for practical optoelectronic applications. Here, Sb³⁺ dopants are introduced into Cs₄SnBr₆ through a water-assisted wet ball milling strategy, resulting in bright and thermally robust emission. The doped materials exhibit pronounced self-trapped exciton (STE) luminescence centered at 525 nm with a broad full width at half maximum of 110 nm, a large Stokes shift of approximately ~1.3 eV, and a photoluminescence lifetime of ~0.8 µs. Remarkably, Sb³⁺ incorporation boosts the photoluminescence quantum yield (PLQY) up to 64% at room temperature while simultaneously improving thermal stability. Correlated spectroscopic analyses reveal that the Sb³⁺-induced lattice distortion of the [SnBr₆]⁴⁻ octahedra strengthens electron–phonon interactions and elevates the STE binding energy, thereby stabilizing the excited states and suppressing nonradiative losses.

The effect of a-SiC_xN_y:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH₄, CH₄, and NH₃ as the precursors, on the stability and photoluminescence of CsPbBr₃ quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr₃ QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr₃ QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr₃ QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 °C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr₃ QD thin films, thus holding potential for future developments in optoelectronic devices.

The chemical identity of oxygen species plays a decisive role in determining the optical stability of halide perovskite QD films. Here, real-time in situ spectroscopic monitoring, together with steady-state and time-resolved photoluminescence measurements, is utilized to differentiate the effects of molecular oxygen and plasma-activated oxygen species on CsPbBr₃ QD films. The films maintain nearly unchanged emission intensity, spectral profile, and carrier lifetimes when stored in vacuum or exposed to molecular O₂ even under UV illumination, demonstrating that neutral O₂ exhibits minimal reactivity toward the [PbBr₆]⁴⁻ framework. In contrast, oxygen plasma generates highly reactive atomic and ionic oxygen species that induce rapid and spatially heterogeneous photoluminescence quenching. This degradation is attributed to Br⁻ extraction, Br-vacancy formation, and subsequent Pb–O bond generation, which collectively introduce deep trap states and enhance nonradiative recombination. These findings clearly indicate that reactive oxygen species rather than molecular O₂ are the dominant driver of oxygen-induced luminescence degradation, providing mechanistic insight and offering processing guidelines for the reliable integration of perovskite nanomaterials in optoelectronic devices.