Zero-dimensional (0D) tin halide perovskites feature extraordinary properties, such as broadband emission, high photoluminescence quantum yield, and self-absorption-free characteristics. The innovation of synthesis approaches for high-quality 0D tin halide perovskites has facilitated the flourishing development of perovskite-based optoelectronic devices in recent years. However, discovering an effective strategy to further enhance their emission efficiency remains a considerable challenge. Herein, we report a unique strategy employing rapid heat treatment to attain efficient self-trapped exciton (STE) emission in Cs₄SnBr₆ zero-dimensional perovskite. Compared to the pristine Cs₄SnBr₆, rapid thermal treatment (RTT) at 200 °C for a duration of 120 s results in an augmented STE emission with the photoluminescence (PL) quantum yield rising from an initial 50.1% to a substantial 64.7%. Temperature-dependent PL spectra analysis, Raman spectra, and PL decay traces reveal that the PL improvement is attributed to the appropriate electron–phonon coupling as well as the increased binding energies of STEs induced by the RTT. Our findings open up a new avenue for efficient luminescent 0D tin-halide perovskites toward the development of efficient optoelectronic devices based on 0D perovskites.

In this paper, a series of Rb⁺-doped Er³⁺/Yb³⁺–Y₂O₃ films were synthesized via a sol-gel method and spin coating. The structure and morphology of the samples were investigated by X-ray diffraction and scanning electron microscopy. The Rb⁺-doped films with nanoparticles, in the size range of 20–40 nm, were obtained. The spectroscopic analysis of the samples was investigated by using the emission spectra and the intensity of luminescence. All the samples exhibited a green emission ascribed to ²H_11/2/⁴S_3/2 to ⁴I_15/2 of Er³⁺ and a red one ascribed to ⁴F_9/2 and its stark level to ⁴I_15/2 of Er³⁺. As the Rb⁺ concentration increased, the intensities of the green light and red light were enhanced 16.97- and 5.81-fold relative to that of the undoped sample. Moreover, by controlling the Rb⁺ concentration, the samples were capable of generating color-tunable luminescence from red to green linearly. The tunable emission was caused by the change of ion distribution ratio in ⁴F_7/2(Er) and ⁴F_9/2(Er) levels. The results suggest that the as-prepared Rb⁺-doped Er³⁺/Yb³⁺–Y₂O₃ films have a great potential for applications of luminescence.

The effect of nitrogen doping on the photoluminescence (PL) of amorphous SiC_xO_y films was investigated. An increase in the content of nitrogen in the films from 1.07% to 25.6% resulted in red, orange-yellow, white, and blue switching PL. Luminescence decay measurements showed an ultrafast decay dynamic with a lifetime of ~1 ns for all the nitrogen-doped SiC_xO_y films. Nitrogen doping could also widen the bandgap of SiC_xO_y films. The microstructure and the elemental compositions of the films were studied by obtaining their Raman spectra and their X-ray photoelectron spectroscopy, respectively. The PL characteristics combined with an analysis of the chemical bonds configurations present in the films suggested that the switching PL was attributed to the change in defect luminescent centers resulting from the chemical bond reconstruction as a function of nitrogen doping. Nitrogen doping provides an alternative route for designing and fabricating tunable and efficient SiC_xO_y-based luminescent films for the development of Si-based optoelectronic devices.

Zero-dimensional tin-based halide perovskites have garnered considerable interest owing to their remarkable optical properties, including broad-band emission, high photoluminescence (PL) efficiency, and low self-absorption. Nevertheless, enhancing the PL efficiency and stability of these materials remains a pressing challenge. In this study, the enhancement of PL and stability in Cs₄SnBr₆ zero-dimensional perovskite was investigated through Ce³⁺ doping. Our experimental results demonstrate that the incorporation of Ce³⁺ can significantly boost the light emission intensity from self-trapped excitons (STEs) in Cs₄SnBr₆, achieving over a 150% increase compared to the undoped sample, with a PL quantum yield of approximately 64.7%. Moreover, the thermal stability of the corresponding doped sample is markedly enhanced. Through comprehensive analyses, including X-ray diffraction, energy-dispersive spectroscopy, time-resolved PL, and temperature-dependent PL measurements, we elucidate that the enhanced light emission is attributed to the distortion of the [SnBr₆]⁴⁻ octahedral structure induced by Ce³⁺ doping, which strengthens electron–phonon coupling and elevates the binding energy of STEs.

We report a rapid synthesis method for producing CsSnCl₃:Mn²⁺ perovskites, derived from SnF₂, and investigate the effects of rapid thermal treatment on their photoluminescence properties. Our study shows that the initial CsSnCl₃:Mn²⁺ samples exhibit a double luminescence peak structure with PL peaks at approximately 450 nm and 640 nm, respectively. These peaks originate from defect-related luminescent centers and the 4T¹→6A¹ transition of Mn²⁺. However, as a result of rapid thermal treatment, the blue emission is significantly reduced and the red emission intensity is increased nearly twofold compared to the pristine sample. Furthermore, the Mn²⁺-doped samples demonstrate excellent thermal stability after the rapid thermal treatment. We suggest that this improvement in photoluminescence results from enhanced excited-state density, energy transfer between defects and the Mn²⁺ state, as well as the reduction of nonradiative recombination centers. Our findings provide valuable insights into the luminescence dynamics of Mn²⁺-doped CsSnCl₃ and open up new possibilities for controlling and optimizing the emission of rare-earth-doped CsSnCl₃.

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N₄⁺ or N₂⁰ as a result of bonding configuration reconstruction.