In this paper, a series of Rb⁺-doped Er³⁺/Yb³⁺–Y₂O₃ films were synthesized via a sol-gel method and spin coating. The structure and morphology of the samples were investigated by X-ray diffraction and scanning electron microscopy. The Rb⁺-doped films with nanoparticles, in the size range of 20–40 nm, were obtained. The spectroscopic analysis of the samples was investigated by using the emission spectra and the intensity of luminescence. All the samples exhibited a green emission ascribed to ²H_11/2/⁴S_3/2 to ⁴I_15/2 of Er³⁺ and a red one ascribed to ⁴F_9/2 and its stark level to ⁴I_15/2 of Er³⁺. As the Rb⁺ concentration increased, the intensities of the green light and red light were enhanced 16.97- and 5.81-fold relative to that of the undoped sample. Moreover, by controlling the Rb⁺ concentration, the samples were capable of generating color-tunable luminescence from red to green linearly. The tunable emission was caused by the change of ion distribution ratio in ⁴F_7/2(Er) and ⁴F_9/2(Er) levels. The results suggest that the as-prepared Rb⁺-doped Er³⁺/Yb³⁺–Y₂O₃ films have a great potential for applications of luminescence.

The effect of nitrogen doping on the photoluminescence (PL) of amorphous SiC_xO_y films was investigated. An increase in the content of nitrogen in the films from 1.07% to 25.6% resulted in red, orange-yellow, white, and blue switching PL. Luminescence decay measurements showed an ultrafast decay dynamic with a lifetime of ~1 ns for all the nitrogen-doped SiC_xO_y films. Nitrogen doping could also widen the bandgap of SiC_xO_y films. The microstructure and the elemental compositions of the films were studied by obtaining their Raman spectra and their X-ray photoelectron spectroscopy, respectively. The PL characteristics combined with an analysis of the chemical bonds configurations present in the films suggested that the switching PL was attributed to the change in defect luminescent centers resulting from the chemical bond reconstruction as a function of nitrogen doping. Nitrogen doping provides an alternative route for designing and fabricating tunable and efficient SiC_xO_y-based luminescent films for the development of Si-based optoelectronic devices.

Multi-band emission luminescence materials are of great significance owing to their extensive application in diverse fields. In this research, we successfully prepared a series of Pr³⁺-doped Ca₃Al₂O₆ multi-band emission phosphors via a high-temperature solid-state method. The phase structure, morphology, luminescence spectra and decay curves were investigated in detail. The Ca₃Al₂O₆:Pr³⁺ phosphors can absorb blue lights and emit lights in the 450–750 nm region, and typical emission bands are located at 488 nm (blue), 525–550 nm (green), 611–614 nm (red), 648 nm (red) and 733 nm (deep red). The influence of the Pr³⁺ doping concentration was discussed, and the optimal Pr³⁺ doping concentration was determined. The impacts of charge compensator ions (Li⁺, Na⁺, and K⁺) on the luminescence of Pr³⁺ were also investigated, and it was found that all the charge compensator ions contributed positively to the emission intensity. More importantly, the emission intensity of the as-prepared phosphors at 423 K can still maintain 65–70% of that at room temperature, and the potential application for pc-LED was investigated. The interesting results indicate that the prepared phosphors may serve multifunctional and advanced applications.

Zero-dimensional tin-based halide perovskites have garnered considerable interest owing to their remarkable optical properties, including broad-band emission, high photoluminescence (PL) efficiency, and low self-absorption. Nevertheless, enhancing the PL efficiency and stability of these materials remains a pressing challenge. In this study, the enhancement of PL and stability in Cs₄SnBr₆ zero-dimensional perovskite was investigated through Ce³⁺ doping. Our experimental results demonstrate that the incorporation of Ce³⁺ can significantly boost the light emission intensity from self-trapped excitons (STEs) in Cs₄SnBr₆, achieving over a 150% increase compared to the undoped sample, with a PL quantum yield of approximately 64.7%. Moreover, the thermal stability of the corresponding doped sample is markedly enhanced. Through comprehensive analyses, including X-ray diffraction, energy-dispersive spectroscopy, time-resolved PL, and temperature-dependent PL measurements, we elucidate that the enhanced light emission is attributed to the distortion of the [SnBr₆]⁴⁻ octahedral structure induced by Ce³⁺ doping, which strengthens electron–phonon coupling and elevates the binding energy of STEs.

We report a rapid synthesis method for producing CsSnCl₃:Mn²⁺ perovskites, derived from SnF₂, and investigate the effects of rapid thermal treatment on their photoluminescence properties. Our study shows that the initial CsSnCl₃:Mn²⁺ samples exhibit a double luminescence peak structure with PL peaks at approximately 450 nm and 640 nm, respectively. These peaks originate from defect-related luminescent centers and the 4T¹→6A¹ transition of Mn²⁺. However, as a result of rapid thermal treatment, the blue emission is significantly reduced and the red emission intensity is increased nearly twofold compared to the pristine sample. Furthermore, the Mn²⁺-doped samples demonstrate excellent thermal stability after the rapid thermal treatment. We suggest that this improvement in photoluminescence results from enhanced excited-state density, energy transfer between defects and the Mn²⁺ state, as well as the reduction of nonradiative recombination centers. Our findings provide valuable insights into the luminescence dynamics of Mn²⁺-doped CsSnCl₃ and open up new possibilities for controlling and optimizing the emission of rare-earth-doped CsSnCl₃.

Zero-dimensional (0D) tin halide perovskites have emerged as promising luminescent materials owing to their broadband emission, high quantum yield, and negligible self-absorption. Yet, their luminescence efficiency and stability remain insufficient for practical optoelectronic applications. Here, Sb³⁺ dopants are introduced into Cs₄SnBr₆ through a water-assisted wet ball milling strategy, resulting in bright and thermally robust emission. The doped materials exhibit pronounced self-trapped exciton (STE) luminescence centered at 525 nm with a broad full width at half maximum of 110 nm, a large Stokes shift of approximately ~1.3 eV, and a photoluminescence lifetime of ~0.8 µs. Remarkably, Sb³⁺ incorporation boosts the photoluminescence quantum yield (PLQY) up to 64% at room temperature while simultaneously improving thermal stability. Correlated spectroscopic analyses reveal that the Sb³⁺-induced lattice distortion of the [SnBr₆]⁴⁻ octahedra strengthens electron–phonon interactions and elevates the STE binding energy, thereby stabilizing the excited states and suppressing nonradiative losses.