We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO₃) deposited into SiO₂/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 10⁸ ions/cm²) followed by etching in HF solution. ZnSeO₃ nanocrystals were obtained via chemical deposition from the aqueous solution of ZnCl₂ and SeO₂ as Zn-, Se- and O-precursors. To estimate the thermal stability of the deposited precipitates, heat treatment was carried out at 800 and 1000 °C for 60 min in a vacuum environment. Scanning electron microscopy (SEM), X-ray diffractometry (XRD), photoluminescence (PL) spectroscopy, and electrical measurements were used for the characterization of ZnSeO₃/SiO_2nanoporous/Si nanocomposites. Thermal treatment of the synthesized nanocomposites resulted in structural transformations with the formation of ZnSe and ZnO phases while the content of the ZnSeO₃ phase decreased. For the as-deposited and annealed precipitates, an emission in the range of (400 to 600) nm was observed. PL spectra were approximated by four Gaussian curves with maxima at ~550 nm (2.2 eV), 488 nm (2.54 eV), ~440 nm (2.82 eV), and 410 nm (3.03 eV). Annealing resulted in a decrease in PL intensity that was possibly due to the weight loss of the deposited substance during high-temperature treatment. The redistribution of maxima intensities after annealing was also observed with an increase in blue and violet emissions. The origin of the observed PL is discussed. The I–V curve analysis revealed an electronic type of conductivity for the ZnSeO₃(NCs)/SiO_2nanoporous/Si structure. The values of the specific conductivity were calculated within the percolation model. The sample annealed at 800 °C showed the highest specific conductivity of 8.5 × 10⁻⁶ Ohm⁻¹·cm⁻¹.

ZnS is one of the most promising wide-bandgap semiconductors for optoelectronic and sensing applications owing to its efficient ultraviolet–blue emission, high exciton binding energy, and chemical stability. However, the synthesis of ZnS nanocrystals in silicon-compatible porous matrices remains largely unexplored. In this work, ordered arrays of ZnS nanocrystals were synthesized for the first time in SiO₂/Si track templates fabricated by swift heavy ion irradiation followed by selective chemical etching. ZnS nanocrystals were deposited by electrochemical deposition from aqueous solutions containing ZnCl₂ and thiourea precursors. The structural, optical, and electrical properties of the resulting ZnS/SiO₂/Si nanocomposites were investigated using scanning electron microscopy, X-ray diffraction, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurements. The fabricated templates contained vertically aligned pores with a density of approximately 10⁸ cm⁻² and an average diameter of about 500 nm. Electrochemical deposition resulted in a pore filling efficiency of approximately 88%. X-ray diffraction analysis confirmed the formation of crystalline ZnS with a cubic zinc blende structure. The nanocomposites exhibit intense ultraviolet–blue photoluminescence in the 335–477 nm range, with pronounced emission peaks at 372 and 400 nm characteristic of ZnS nanocrystals. Current–voltage measurements indicate predominantly electronic conductivity, with a conductivity of 1.54 × 10⁻⁶ Ohm⁻¹·cm⁻¹, comparable to values reported for polycrystalline ZnS films. To support the experimental observations, the electronic structure of ZnS was analyzed using density functional theory within the LCAO framework. The calculated bandgap of 3.4 eV is consistent with previously reported theoretical and experimental data. The obtained results demonstrate that SiO₂/Si track templates provide a promising platform for the fabrication of ordered ZnS nanoarrays with potential applications in silicon-compatible optoelectronic and sensing devices.