In this letter, we propose to implement a microwave lateral GaN Schottky barrier diode (SBD) in a designed 5.8-GHz rectifier circuit for future high-power and high-efficiency wireless power transfer. The low-pressure chemical vapor deposition SiN-passivated lateral GaN SBD demonstrates a low turn- on voltage of 0.38 V, a low on -resistance of 4.5 Ω, a low junction capacitance of 0.32 pF at 0-V bias, and a high breakdown voltage of 164 V, which are essentials for a high-efficiency and high-power rectifying application. By incorporating this lateral GaN SBD in a well-designed 5.8-GHz rectifier circuit, an unprecedented combination of high efficiency and high power is achieved simultaneously. The rectifier circuit demonstrates a high RF/dc conversion efficiency ( η _RF/DC ) of 71 ± 4.5% with an input power ( P _in ) of 2.5 W and η _RF/DC = 50 ± 4.5% with P _in = 6.4 W per single diode, showing the great promise of embracing lateral GaN SBD for future wireless high-power transfer application.

In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn-on voltage ( $\text{V}_{\mathbf {on}}$ ), high breakdown voltage (BV) with low reverse leakage current ( $\text{I}_{\mathbf {R}}$ ), and high power figure of merit (P-FOM) through anode engineering technique. Lateral GaN SBD with anode-cathode distance ( $\text{L}_{\mathbf {AC}}$ ) of $25~\mu \text{m}$ demonstrates a $\text{V}_{\mathbf {on}} =0.38$ V, a BV of >3 kV at a $\text{I}_{\mathbf {R}}$ of $10\mu \text{A}$ /mm and differential specific ON-resistance ( $\text{R}_{\mathbf {on,sp}}$ ) of 2.94 $\text{m}\Omega ~\cdot $ cm ² , yielding a high P-FOM of more than 3 GW/cm ² . To the best of our knowledge, this P-FOM is the highest value among all the GaN SBDs on any substrates. Combining with 5 A forward current ( $\text{I}_{\mathbf {F}}$ ) and reverse BV >2 kV of a large periphery device with perimeter of 20 mm, GaN SBD with anode engineering technique shows its great promise for next generation power electronics.

In this article, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from the rectifier circuit construction and state-of-art GaN Schottky barrier diode (SBD) device technology to the WPT system demonstration. Benefited from the wide bandgap, high mobility, and saturation velocity of the gallium nitride (GaN) two-dimensional electron gas, engineered lateral GaN SBD with low turn- on voltage ( V _on ) of 0.47 V, on -resistance ( R _on ) of 4 Ω, breakdown voltage of 170 V, and junction capacitance $(C_{j})$ of 0.32 pF at 0 V bias are achieved, which satisfy the fundamental requirements for microwave power rectification. After incorporating the high-performance GaN SBD into the optimized rectifier circuit, high radio frequency (RF)/dc conversion efficiency of 79% is achieved, and the input power of per single GaN SBD is increased by 10X when compared with that of a commercially available silicon (Si) SBD at the same efficiency of 50% and frequency of 2.45 GHz. Based on the rectifier circuit, a microwave power transfer system is constructed with 400 light emitting diodes lighted up, verifying the great promise of adopting high-power GaN SBD for the wireless high-power transfer as an alternative energy-harvesting technique for future WPT application.

In this letter, we report on demonstrating high-performance enhancement-mode (E-mode) ${p}$ -channel GaN Fin Field-Effect Transistors (FinFETs) fabricated on a proposed ${p}$ -GaN/AlN/AlGaN epitaxial structure with a low sheet resistance of 14 $\text{k}\Omega / {\unicode{0x25A1}} $ . Benefiting from the 25-nm-wide GaN nanowires channel and tri-gate architecture, high threshold voltage ( ${V}_{\text{TH}}$ ) of −2.2 V and low subthreshold swing ( SS ) of 130 mV/dec were obtained. Meanwhile, owing to the removal of etching damage in the recessed region and the post gate annealing, high drain current density of 18.5 mA/mm and high ${I}_{ \mathrm{\scriptscriptstyle ON}} / I_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of $3\times10$ ⁸ were acquired. The E-mode ${p}$ -channel GaN FinFET fabricated on the reformative epitaxial structure with lower sheet resistance shows the potential to be one step closer to realizing the vision of GaN CMOS technology.

In this letter, we demonstrate a high-performance lateral AlGaN/GaN Schottky barrier diode (SBD) using an 80-nm thick GaN cap layer as the passivation layer and a low work-function tungsten (W) layer as the anode. A low turn-on voltage ( ${V}_{ON}$ ) of 0.38 V and a high breakdown voltage of 2.08 kV are obtained at the same time. Additionally, the normalized dynamic on-resistance ( ${R}_{ON,dyn}$ ) becomes only a factor of 1.13 higher than the static on-resistance ( ${R}_{ON}$ ) after a 10-s-long bias test at 900 V. Also owing to the impressively stability of ${R}_{ON,dyn}$ and ${V}_{ON}$ under long-duration stress, these lateral GaN SBDs with a thick GaN cap layer show a great potential for the next-generation of power electronic devices.