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Shan Yin
Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China and the Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China

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Journal article
Published: 23 February 2021 in IEEE Journal of Emerging and Selected Topics in Power Electronics
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Silicon carbide (SiC) gate turn-off (GTO) thyristor is attractive for the grid applications due to the excellent performances of high blocking voltage and low on-resistance. However, the short-circuit reliability issue has become one of the limiting factors. An in-situ condition monitoring method for the reliability of SiC GTO is presented in this work. It uses the forward I-V characteristics of anode-gate pn junction as the reliability degradation precursor of SiC GTO. The monitoring circuit shows a current resolution of 64 μA with the current range of -31~1027 mA. It provides a full electrical isolation with 2-kV isolation voltage. Finally, a set of short-circuit power cycling tests are conducted with the monitoring circuit, and the results show that the method proposed in this paper can effectively detect the change of I-V characteristics of SiC GTO to predict the degradation of device physical health.

ACS Style

Yinyu Liu; Lifang Liu; Shan Yin; Yunfei Gu; Shuairong Deng; Zhanqiang Xing; Quanfeng Zhou; Zhiqiang Li; Kun Zhou. A High-Resolution In-Situ Condition Monitoring Circuit for SiC Gate Turn-Off Thyristor in Grid Applications. IEEE Journal of Emerging and Selected Topics in Power Electronics 2021, PP, 1 -1.

AMA Style

Yinyu Liu, Lifang Liu, Shan Yin, Yunfei Gu, Shuairong Deng, Zhanqiang Xing, Quanfeng Zhou, Zhiqiang Li, Kun Zhou. A High-Resolution In-Situ Condition Monitoring Circuit for SiC Gate Turn-Off Thyristor in Grid Applications. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2021; PP (99):1-1.

Chicago/Turabian Style

Yinyu Liu; Lifang Liu; Shan Yin; Yunfei Gu; Shuairong Deng; Zhanqiang Xing; Quanfeng Zhou; Zhiqiang Li; Kun Zhou. 2021. "A High-Resolution In-Situ Condition Monitoring Circuit for SiC Gate Turn-Off Thyristor in Grid Applications." IEEE Journal of Emerging and Selected Topics in Power Electronics PP, no. 99: 1-1.

Journal article
Published: 10 December 2020 in IEEE Transactions on Power Electronics
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Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is a promising candidate for the high-density power converter applications. Due to the low switching loss, the GaN HEMT may lead to a new horizon in the applications such as fast charger, wireless charging, and 5G power amplifier. However, the fast switching speed of GaN HEMT makes it extremely sensitive to parasitic parameters, especially for the low-voltage GaN devices with small packages. Conventional switching loss estimation methods, which are normally based on the calibration fixture or modification of test circuit, cannot be effectively utilized for GaN HEMT. This paper presents an accurate switching loss estimation method using the post-processing technique. The proposed switching loss technique consists of three parts of signal processing, which are the wavelet denoising process to minimize the influence of background noise, the voltage-current $(V - I)$ alignment process to reduce errors from probe propagation delay, and the linear interpolation process for further improvement of alignment accuracy. In addition, a modified SPICE model is proposed to investigate the influence of parasitic parameters on switching losses by the circuit simulation. Based on the theoretical switching characteristics, the switching loss estimation method is finally validated experimentally on a commercial 40-V/10-A GaN HEMT in a double pulse test.

ACS Style

Minghai Dong; Hui Li; Shan Yin; Yingzhe Wu; Kye Yak See. A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices. IEEE Transactions on Power Electronics 2020, 36, 8253 -8266.

AMA Style

Minghai Dong, Hui Li, Shan Yin, Yingzhe Wu, Kye Yak See. A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices. IEEE Transactions on Power Electronics. 2020; 36 (7):8253-8266.

Chicago/Turabian Style

Minghai Dong; Hui Li; Shan Yin; Yingzhe Wu; Kye Yak See. 2020. "A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices." IEEE Transactions on Power Electronics 36, no. 7: 8253-8266.

Journal article
Published: 05 October 2020 in Energies
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The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency, power density, and reliability. However, the fast switching transient and serious switching ringing of the SiC MOSFET can cause unwanted high-frequency (HF) electromagnetic interference (EMI), which may significantly reduce the reliability of the motor drive in many aspects. In order to comprehensively reveal the mechanism of the EMI previously used in motor drives using SiC MOSFET, this paper plans to analyze the influences of both HF impedance of the motor and switching characteristics of the SiC MOSFET. A simulation model for motor drives has been proposed, which contains the HF circuit model of the motor as well as a semi-behavioral analytical model of the SiC MOSFET. Since the model shows a good agreement with the experimentally measured results on spectra of drain-source voltage of the SiC MOSFET (vds), phase to ground voltage of the motor (vphase), CM voltage (vcm), phase current of the motor (idm), and CM current (icm), it can be adopted to quantitatively investigate the influence of the motor impedance on EMI through frequency-domain analysis. Additionally, the impacts of switching characteristics of SiC MOSFET on EMI are also well studied according to relative experiment results in terms of switching speed, switching frequency, and switching ringing. Based on the analysis above, the relationship between motor impedance, switching characteristics of the SiC MOSFET, and HF EMI can be figured out, which is able to provide much helpful assistance for application of the motor drive.

ACS Style

Yingzhe Wu; Shan Yin; Hui Li; Minghai Dong. Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive. Energies 2020, 13, 5173 .

AMA Style

Yingzhe Wu, Shan Yin, Hui Li, Minghai Dong. Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive. Energies. 2020; 13 (19):5173.

Chicago/Turabian Style

Yingzhe Wu; Shan Yin; Hui Li; Minghai Dong. 2020. "Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive." Energies 13, no. 19: 5173.

Journal article
Published: 29 November 2019 in Energies
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Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

ACS Style

Shan Yin; Yingzhe Wu; Yitao Liu; Xuewei Pan. Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT. Energies 2019, 12, 4546 .

AMA Style

Shan Yin, Yingzhe Wu, Yitao Liu, Xuewei Pan. Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT. Energies. 2019; 12 (23):4546.

Chicago/Turabian Style

Shan Yin; Yingzhe Wu; Yitao Liu; Xuewei Pan. 2019. "Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT." Energies 12, no. 23: 4546.

Journal article
Published: 13 November 2019 in IEEE Journal of Emerging and Selected Topics in Power Electronics
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As the most popular wide bandgap (WBG) power device, the silicon carbide (SiC) MOSFET has been widely adopted in the power electronics applications, and brings in the benefits including reduced switching losses, enhanced switching frequency, and improved power density. However, the switching oscillation and the electromagnetic interference (EMI) become more serious due to the rapid switching speed of SiC MOSFET. Thus, adding RC snubber branch is considered as an effective method to suppress such unwanted oscillation in the early works. In this paper, the switching transient of SiC MOSFET with RC snubber is investigated with an analytical model based on finite state machine (FSM). The accuracy of proposed analytical model can be verified by comparisons between calculated and measured waveforms during the switching transition. In addition, the impacts of the RC snubber on switching oscillation, switching loss and high-frequency (HF) EMI noise have been comprehensively investigated based on the model, which shows that the added RC snubber can effectively avoid the switching oscillation, and reduce the level of HF EMI without increasing switching loss.

ACS Style

Yingzhe Wu; Shan Yin; Hui Li; Wenjie Ma. Impact of $RC$ Snubber on Switching Oscillation Damping of SiC MOSFET With Analytical Model. IEEE Journal of Emerging and Selected Topics in Power Electronics 2019, 8, 163 -178.

AMA Style

Yingzhe Wu, Shan Yin, Hui Li, Wenjie Ma. Impact of $RC$ Snubber on Switching Oscillation Damping of SiC MOSFET With Analytical Model. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2019; 8 (1):163-178.

Chicago/Turabian Style

Yingzhe Wu; Shan Yin; Hui Li; Wenjie Ma. 2019. "Impact of $RC$ Snubber on Switching Oscillation Damping of SiC MOSFET With Analytical Model." IEEE Journal of Emerging and Selected Topics in Power Electronics 8, no. 1: 163-178.

Journal article
Published: 12 September 2019 in IEEE Transactions on Industrial Electronics
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In this paper, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from the rectifier circuit construction and state-of-art GaN Schottky Barrier Diode (SBD) device technology to the WPT system demonstration. Benefited from the wide bandgap, high mobility and saturation velocity of the GaN 2-dimensional-electron-gas (2DEG), engineered lateral GaN SBD with low turn-on voltage ( $\text{V}_{\text{on}}$ ) of 0.47 V, on-resistance ( $\text{R}_{\text{on}}$ ) of 4 Ω, breakdown voltage (BV) of 170 V and junction capacitance ( $\text{C}_{\text{j}}$ ) of 0.32 pF at 0 V bias are achieved, which satisfy the fundamental requirements for microwave power rectification. After incorporating the high performance GaN SBD into the optimized rectifier circuit, high RF/DC conversion efficiency of 79% is achieved and the input power of per single GaN SBD is increased by 10X when compared with that of a commercial available Si SBD at the same efficiency of 50% and frequency of 2.45 GHz. Based on the rectifier circuit, a microwave power transfer system is constructed with 400 LEDs lighted up, verifying the great promise of adopting high-power GaN SBD for the wireless high-power transfer as an alternative energy harvesting technique for future WPT application.

ACS Style

Kui Dang; Jincheng Zhang; Hong Zhou; Shan Yin; Tao Zhang; Jing Ning; Yachao Zhang; Zhaoke Bian; Jiabo Chen; Xiaoling Duan; Shenglei Zhao; Yue Hao. Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. IEEE Transactions on Industrial Electronics 2019, 67, 6597 -6606.

AMA Style

Kui Dang, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Shenglei Zhao, Yue Hao. Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. IEEE Transactions on Industrial Electronics. 2019; 67 (8):6597-6606.

Chicago/Turabian Style

Kui Dang; Jincheng Zhang; Hong Zhou; Shan Yin; Tao Zhang; Jing Ning; Yachao Zhang; Zhaoke Bian; Jiabo Chen; Xiaoling Duan; Shenglei Zhao; Yue Hao. 2019. "Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration." IEEE Transactions on Industrial Electronics 67, no. 8: 6597-6606.

Journal article
Published: 15 May 2019 in IEEE Journal of Emerging and Selected Topics in Power Electronics
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The conventional Z-Source inverter (ZSI) has the following disadvantages: unidirectional power flow, high start-up inrush current, presence of undesirable mode operation, and low boost factor. To solve aforementioned shortcomings, an enhanced-boost bi-directional Quasi-ZSI (QZSI) with novel active switched inductor (SL) cells (named as Active-SLs QZSI) is proposed. The proposed active SL cell replaces three diodes in the conventional SL cell of the QZSI with two capacitors and one active switch, thus allowing bi-directional power flow and achieving higher boost factor. Besides, the Z-Source Network (ZSN) diode is also replaced by an active switch. Compared with existing ZSIs, the proposed Active-SLs QZSI has less current stress of ZSN, higher efficiency and higher boost factor. A modified Space Vector Modulation (MSVM) is introduced to reduce the switching frequency of active switches of ZSN. Both simulation and experimental results validate theoretical analysis of the proposed Active-SLs QZSI.

ACS Style

Xuewei Pan; Zhicong Pang; Yitao Liu; Shan Yin; Chenchen Ju. Enhanced-Boost Bidirectional Quasi-Z-Source Inverter With Novel Active Switched Inductor Cells. IEEE Journal of Emerging and Selected Topics in Power Electronics 2019, 8, 3041 -3055.

AMA Style

Xuewei Pan, Zhicong Pang, Yitao Liu, Shan Yin, Chenchen Ju. Enhanced-Boost Bidirectional Quasi-Z-Source Inverter With Novel Active Switched Inductor Cells. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2019; 8 (3):3041-3055.

Chicago/Turabian Style

Xuewei Pan; Zhicong Pang; Yitao Liu; Shan Yin; Chenchen Ju. 2019. "Enhanced-Boost Bidirectional Quasi-Z-Source Inverter With Novel Active Switched Inductor Cells." IEEE Journal of Emerging and Selected Topics in Power Electronics 8, no. 3: 3041-3055.

Journal article
Published: 03 July 2018 in IEEE Transactions on Plasma Science
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The trend to move toward the solid-state and repetitive pulsed power supply requires the high-voltage, high-current, and high-speed semiconductor devices, which makes an insulated gate bipolar transistor (IGBT) preferred for this application. However, as a bipolar device, the IGBT is limited by the switching speed and switching loss. In this paper, the potential of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) for the pulsed power application is investigated. The surge current capabilities of 1.2-kV, 30-A commercial Si IGBT and SiC MOSFET are characterized and compared by the capacitor discharge experiment. In addition, the effects of various circuit parameters, including gate resistance, dc-link voltage, and dc-link capacitance, on the capacitor discharge process are investigated. It is found that the pulse current of SiC MOSFET is around two times of Si IGBT, which achieves good agreement with the datasheet. Using $di/dt$ to represent the discharging speed, the SiC MOSFET is 10 times faster than the Si IGBT. It is because the SiC MOSFET shows a lower ON-resistance in the saturation region resulted from the short-channel effect. This paper confirms the high-speed and high-current advantages of SiC MOSFET in the pulsed power application.

ACS Style

Shan Yin; Yunfei Gu; Shuairong Deng; Xiong Xin; Gang Dai. Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application. IEEE Transactions on Plasma Science 2018, 46, 2979 -2984.

AMA Style

Shan Yin, Yunfei Gu, Shuairong Deng, Xiong Xin, Gang Dai. Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application. IEEE Transactions on Plasma Science. 2018; 46 (8):2979-2984.

Chicago/Turabian Style

Shan Yin; Yunfei Gu; Shuairong Deng; Xiong Xin; Gang Dai. 2018. "Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application." IEEE Transactions on Plasma Science 46, no. 8: 2979-2984.

Journal article
Published: 07 June 2018 in IEEE Transactions on Electron Devices
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A physics-based compact model of silicon carbide (SiC) junction barrier Schottky diode for circuit simulation is developed in this paper. The semiconductor physics mechanism in SiC, such as temperature-dependent mobility and incomplete ionization, are considered. The detailed device parameters, including drift region concentration, drift thickness, active area, and Schottky barrier height, are modeled. Then, a datasheet-oriented parameter extraction procedure for the device parameters is presented for three kinds of commercial SiC Schottky diodes with junction barrier structure. The model is implemented in the circuit simulator PSpice. In order to verify this model, the Technology Computer-Aided Design Sentaurus simulation is conducted with the device parameters and physical models, which shows a good agreement with the PSpice simulation.

ACS Style

Shan Yin; Yunfei Gu; King Jet Tseng; Juntao Li; Gang Dai; Kun Zhou. A Physics-Based Compact Model of SiC Junction Barrier Schottky Diode for Circuit Simulation. IEEE Transactions on Electron Devices 2018, 65, 3095 -3103.

AMA Style

Shan Yin, Yunfei Gu, King Jet Tseng, Juntao Li, Gang Dai, Kun Zhou. A Physics-Based Compact Model of SiC Junction Barrier Schottky Diode for Circuit Simulation. IEEE Transactions on Electron Devices. 2018; 65 (8):3095-3103.

Chicago/Turabian Style

Shan Yin; Yunfei Gu; King Jet Tseng; Juntao Li; Gang Dai; Kun Zhou. 2018. "A Physics-Based Compact Model of SiC Junction Barrier Schottky Diode for Circuit Simulation." IEEE Transactions on Electron Devices 65, no. 8: 3095-3103.

Journal article
Published: 02 October 2017 in Energies
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A power factor correction (PFC) converter with interleaved multi-channel topology is gaining increasing attention due to its ability in reducing input and output current ripples, but an Electromagnetic Interference (EMI) noise filter is still required for suppressing the large high-frequency switching noise that could potentially degrade the input power quality of the supplying grid and cause malfunctions to other grid-connected systems. In this paper, a magnetic modeling of an interleaved PFC converter with an input differential mode (DM) EMI filter has been successfully implemented, which considers the nonlinear behavior of the inductive component in the EMI filter. The Jiles-Atherton (J-A) model is applied to describe the filtering inductor whose core displays saturation and hysteresis. The simulation results are verified with the experimental test.

ACS Style

Yitao Liu; Shan Yin; Xuewei Pan; Huaizhi Wang; Guibin Wang; Jianchun Peng. Effects of Nonlinearity in Input Filter on the Dynamic Behavior of an Interleaved Boost PFC Converter. Energies 2017, 10, 1530 .

AMA Style

Yitao Liu, Shan Yin, Xuewei Pan, Huaizhi Wang, Guibin Wang, Jianchun Peng. Effects of Nonlinearity in Input Filter on the Dynamic Behavior of an Interleaved Boost PFC Converter. Energies. 2017; 10 (10):1530.

Chicago/Turabian Style

Yitao Liu; Shan Yin; Xuewei Pan; Huaizhi Wang; Guibin Wang; Jianchun Peng. 2017. "Effects of Nonlinearity in Input Filter on the Dynamic Behavior of an Interleaved Boost PFC Converter." Energies 10, no. 10: 1530.

Journal article
Published: 31 July 2017 in IEEE Transactions on Industrial Electronics
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For power converters with inductive loads, a freewheeling path is needed for the current due to reactive power. The MOSFET synchronous rectification (SR) is widely used to reduce the conduction loss during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the intrinsic body diode of SiC MOSFET exhibits a high voltage drop. Hence, an antiparallel SiC Schottky diode is normally implemented to eliminate its conduction. However, the external SiC Schottky diode is not fully utilized as it only works during the dead time. In this paper, the hard-switching SR is investigated in an SiC three-phase inverter and compared with a conventional inverter using freewheeling diode (FWD). An improved power loss model for the two inverters has been developed. It is found that the inverter using SR has higher efficiency due to the smaller switching loss. A 7-kW prototype of SiC three-phase inverter is built, which achieves a peak efficiency of 98.8% (±0.15%) and 98.5% (±0.15%) at 40 kHz using SR and FWD, respectively. This paper confirms that the SiC MOSFET is an ideal candidate for the SR.

ACS Style

Shan Yin; Yitao Liu; Yong Liu; King Jet Tseng; Josep Pou; Rejeki Simanjorang. Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode. IEEE Transactions on Industrial Electronics 2017, 65, 1051 -1061.

AMA Style

Shan Yin, Yitao Liu, Yong Liu, King Jet Tseng, Josep Pou, Rejeki Simanjorang. Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode. IEEE Transactions on Industrial Electronics. 2017; 65 (2):1051-1061.

Chicago/Turabian Style

Shan Yin; Yitao Liu; Yong Liu; King Jet Tseng; Josep Pou; Rejeki Simanjorang. 2017. "Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode." IEEE Transactions on Industrial Electronics 65, no. 2: 1051-1061.

Research article
Published: 01 July 2017 in IET Power Electronics
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Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is regarded as an attractive replacement for Si insulated gate bipolar transistor (IGBT) in high-power density applications due to its high switching speed and low switching loss. However, to fully utilise these benefits, the gate driver of the SiC MOSFET needs to be optimised to meet its special driving requirements. Fundamentally, both gate drivers for Si IGBT and SiC MOSFET share similar design methodology since these two power devices have the same MOS-gated structure. However, one of the major challenges in the gate driver design for SiC MOSFET is overcoming the electromagnetic interference, which is resulted from the much higher dv/dt and di/dt ratios during the switching transition. In this study, high-speed gate drivers for Si IGBT and SiC MOSFET power modules of similar ratings of 1.2 kV/120 A have been designed. The performances of gate driver have been experimentally evaluated by a double pulse test. The design considerations of gate driver to enable the replacement of Si IGBT by SiC MOSFET have been conclusively investigated and presented in this study.

ACS Style

Shan Yin; King Jet Tseng; Rejeki Simanjorang; Pengfei Tu. Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules. IET Power Electronics 2017, 10, 979 -986.

AMA Style

Shan Yin, King Jet Tseng, Rejeki Simanjorang, Pengfei Tu. Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules. IET Power Electronics. 2017; 10 (9):979-986.

Chicago/Turabian Style

Shan Yin; King Jet Tseng; Rejeki Simanjorang; Pengfei Tu. 2017. "Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules." IET Power Electronics 10, no. 9: 979-986.

Research article
Published: 23 June 2017 in IET Power Electronics
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The high switching speed in a silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) will aggravate the parasitic effects (di/dt and dv/dt) arising from the interaction with parasitic elements. In this project, a high-speed gate driver has been developed and optimised for the commercially available SiC MOSFET power module. The impact of various parasitic parameters on parasitic effects is initially evaluated. Then, an improved gate-assisted circuit is proposed with a local low-impedance path for both discharging and Cdv/dt currents. It allows maximised turn-off speed (dv/dt up to 36 V/ns) and minimised turn-off loss (reduction up to 70%). It also produces a reduction in electromagnetic interference. The gate voltage spike due to Cdv/dt current is reduced below the threshold voltage at various testing conditions.

ACS Style

Shan Yin; King Jet Tseng; Chin Foong Tong; Rejeki Simanjorang. Design of high‐speed gate driver to reduce switching loss and mitigate parasitic effects for SiC MOSFET. IET Power Electronics 2017, 10, 1183 -1189.

AMA Style

Shan Yin, King Jet Tseng, Chin Foong Tong, Rejeki Simanjorang. Design of high‐speed gate driver to reduce switching loss and mitigate parasitic effects for SiC MOSFET. IET Power Electronics. 2017; 10 (10):1183-1189.

Chicago/Turabian Style

Shan Yin; King Jet Tseng; Chin Foong Tong; Rejeki Simanjorang. 2017. "Design of high‐speed gate driver to reduce switching loss and mitigate parasitic effects for SiC MOSFET." IET Power Electronics 10, no. 10: 1183-1189.

Journal article
Published: 06 April 2017 in IEEE Transactions on Industry Applications
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The increasing demand for high power density requires the power converter to operate in high switching frequency. Silicon carbide (SiC) power module is regarded as one of the most promising candidates for high-frequency applications due to the superior switching speed and low switching loss. With the increase of switching frequency, the switching loss will be the limiting factor of efficiency. Hence, it should be minimized during each switching transition. The optimization of switching loss is normally achieved by the repetitive double pulse test experiments. It is time-consuming to find an optimum gate resistance to achieve the tradeoff between switching loss and electromagnetic interface. In this paper, an accurate subcircuit model for SiC power module is proposed to assist optimization of switching loss in converter design. By considering the device physics and structure, an accurate Miller capacitance model is obtained. Moreover, a parameter extraction procedure is presented, which is based on the datasheet. Good agreements are achieved between the PSpice simulation and experiment.

ACS Style

Shan Yin; Pengfei Tu; Peng Wang; King Jet Tseng; Chen Qi; Xiaolei Hu; Michael Zagrodnik; Rejeki Simanjorang. An Accurate Subcircuit Model of SiC Half-Bridge Module for Switching-Loss Optimization. IEEE Transactions on Industry Applications 2017, 53, 3840 -3848.

AMA Style

Shan Yin, Pengfei Tu, Peng Wang, King Jet Tseng, Chen Qi, Xiaolei Hu, Michael Zagrodnik, Rejeki Simanjorang. An Accurate Subcircuit Model of SiC Half-Bridge Module for Switching-Loss Optimization. IEEE Transactions on Industry Applications. 2017; 53 (4):3840-3848.

Chicago/Turabian Style

Shan Yin; Pengfei Tu; Peng Wang; King Jet Tseng; Chen Qi; Xiaolei Hu; Michael Zagrodnik; Rejeki Simanjorang. 2017. "An Accurate Subcircuit Model of SiC Half-Bridge Module for Switching-Loss Optimization." IEEE Transactions on Industry Applications 53, no. 4: 3840-3848.

Journal article
Published: 02 March 2017 in IEEE Transactions on Industrial Electronics
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To achieve high power density, increasing the switching frequency of the power converter has become a trend. The LCL filter is a major contributor of the overall weight of a high-power-density converter (HPDC), especially the inverter-side inductor, which requires to suppress higher frequency harmonic contents at the inverter side. This paper describes a comprehensive design flow of the LCL filter for a 50-kW, 60-kHz two-level silicon carbide (SiC) inverter for high-power aerospace applications with space constraint and harsh ambient temperature environment. To meet the space constraint requirement and reduce the inductor size, specific design attention is made on a customized amorphous cored inductor with a comprehensive study on the relationships of inductor weight, core width, and total surface area with respect to air gap length. To overcome the harsh ambient temperature environment, a liquid cooling system of the amorphous cored inductor is also described.

ACS Style

Yong Liu; Kye-Yak See; Shan Yin; Rejeki Simanjorang; Chin Foong Tong; Arie Nawawi; Jih-Sheng Jason Lai. LCL Filter Design of a 50-kW 60-kHz SiC Inverter with Size and Thermal Considerations for Aerospace Applications. IEEE Transactions on Industrial Electronics 2017, 64, 8321 -8333.

AMA Style

Yong Liu, Kye-Yak See, Shan Yin, Rejeki Simanjorang, Chin Foong Tong, Arie Nawawi, Jih-Sheng Jason Lai. LCL Filter Design of a 50-kW 60-kHz SiC Inverter with Size and Thermal Considerations for Aerospace Applications. IEEE Transactions on Industrial Electronics. 2017; 64 (10):8321-8333.

Chicago/Turabian Style

Yong Liu; Kye-Yak See; Shan Yin; Rejeki Simanjorang; Chin Foong Tong; Arie Nawawi; Jih-Sheng Jason Lai. 2017. "LCL Filter Design of a 50-kW 60-kHz SiC Inverter with Size and Thermal Considerations for Aerospace Applications." IEEE Transactions on Industrial Electronics 64, no. 10: 8321-8333.

Journal article
Published: 31 October 2016 in IEEE Transactions on Industry Applications
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This paper presents a design methodology for a high power density converter, which emphasizes weight minimization. The design methodology considers various inverter topologies and semiconductor devices with application of cold plate cooling and LCL filter. Design for a high-power inverter is evaluated with demonstration of a 50 kVA 2-level 3-phase SiC inverter operating at 60 kHz switching frequency. The prototype achieves high gravimetric power density of 6.49 kW/kg.

ACS Style

Arie Nawawi; Rejeki Simanjorang; Chandana Jayampathi Gajanayake; Amit K. Gupta; Chin Foong Tong; Shan Yin; Assel Sakanova; Yitao Liu; Yong Liu; Men Kai; Kye Yak See; King-Jet Tseng. Design and Demonstration of High Power Density Inverter for Aircraft Applications. IEEE Transactions on Industry Applications 2016, 53, 1168 -1176.

AMA Style

Arie Nawawi, Rejeki Simanjorang, Chandana Jayampathi Gajanayake, Amit K. Gupta, Chin Foong Tong, Shan Yin, Assel Sakanova, Yitao Liu, Yong Liu, Men Kai, Kye Yak See, King-Jet Tseng. Design and Demonstration of High Power Density Inverter for Aircraft Applications. IEEE Transactions on Industry Applications. 2016; 53 (2):1168-1176.

Chicago/Turabian Style

Arie Nawawi; Rejeki Simanjorang; Chandana Jayampathi Gajanayake; Amit K. Gupta; Chin Foong Tong; Shan Yin; Assel Sakanova; Yitao Liu; Yong Liu; Men Kai; Kye Yak See; King-Jet Tseng. 2016. "Design and Demonstration of High Power Density Inverter for Aircraft Applications." IEEE Transactions on Industry Applications 53, no. 2: 1168-1176.

Conference paper
Published: 01 September 2015 in 2015 IEEE Energy Conversion Congress and Exposition (ECCE)
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As SiC MOSFET is moving towards high current rating through parallel devices in a module, the ability to switch it fast with minimum switching loss becomes a new challenge. Amid this new challenge, power converter designers need to deal with more demanding measurement method to obtain correct switching waveforms. Switching waveforms are an important asset for converter designers because they can reveal vital parasitic information, indicate any potential overshoot or undershoot and estimate the switching loss. This paper shares the experimental work results, its measurement techniques (current and voltage) and test setup use to obtain minimum voltage overshoot of a 5 parallel SiC devices module. The cable length (of voltage probe) is shown to directly affect the switching loss estimation especially when a fast 5Ω gate driver resistance is used.

ACS Style

C. F. Tong; A. Nawawi; Yitao Liu; Shan Yin; K. J. Tseng; Yong Liu; Kye Yak See; A. Sakanova; Rejeki Simanjorang; C. J. Gajanayake; A. Gupta. Challenges in switching waveforms measurement for a high-speed switching module. 2015 IEEE Energy Conversion Congress and Exposition (ECCE) 2015, 6175 -6179.

AMA Style

C. F. Tong, A. Nawawi, Yitao Liu, Shan Yin, K. J. Tseng, Yong Liu, Kye Yak See, A. Sakanova, Rejeki Simanjorang, C. J. Gajanayake, A. Gupta. Challenges in switching waveforms measurement for a high-speed switching module. 2015 IEEE Energy Conversion Congress and Exposition (ECCE). 2015; ():6175-6179.

Chicago/Turabian Style

C. F. Tong; A. Nawawi; Yitao Liu; Shan Yin; K. J. Tseng; Yong Liu; Kye Yak See; A. Sakanova; Rejeki Simanjorang; C. J. Gajanayake; A. Gupta. 2015. "Challenges in switching waveforms measurement for a high-speed switching module." 2015 IEEE Energy Conversion Congress and Exposition (ECCE) , no. : 6175-6179.

Conference paper
Published: 01 June 2015 in 2015 IEEE 11th International Conference on Power Electronics and Drive Systems
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The high-speed switching of SiC MOSFET allows power converter to operate with higher frequency and lower switching loss. However, it tends to aggravate dv/dt effect due to the impact of parasitic parameters, resulting in shoot-through and high device stress in the half bridge configuration. In this study, a compact and high-speed gate driver is developed and optimized for SiC half bridge module. The impact of various circuit parameters including Miller capacitance, common source inductance, gate resistance and gate inductance is evaluated. The improved gate drivers with additional features are compared and optimized to eliminate shoot-through.

ACS Style

Shan Yin; K. J. Tseng; C. F. Tong; R. Simanjorang; C. J. Gajanayake; A. Nawawi; Yitao Liu; Yong Liu; Kye Yak See; A. Sakanova; Kai Men; A. K. Gupta. Gate driver optimization to mitigate shoot-through in high-speed switching SiC half bridge module. 2015 IEEE 11th International Conference on Power Electronics and Drive Systems 2015, 484 -491.

AMA Style

Shan Yin, K. J. Tseng, C. F. Tong, R. Simanjorang, C. J. Gajanayake, A. Nawawi, Yitao Liu, Yong Liu, Kye Yak See, A. Sakanova, Kai Men, A. K. Gupta. Gate driver optimization to mitigate shoot-through in high-speed switching SiC half bridge module. 2015 IEEE 11th International Conference on Power Electronics and Drive Systems. 2015; ():484-491.

Chicago/Turabian Style

Shan Yin; K. J. Tseng; C. F. Tong; R. Simanjorang; C. J. Gajanayake; A. Nawawi; Yitao Liu; Yong Liu; Kye Yak See; A. Sakanova; Kai Men; A. K. Gupta. 2015. "Gate driver optimization to mitigate shoot-through in high-speed switching SiC half bridge module." 2015 IEEE 11th International Conference on Power Electronics and Drive Systems , no. : 484-491.