Micro-LEDs have found widespread applications in modular large-screen TVs, automotive displays, and high-resolution-density augmented reality glasses. However, these micron-sized LEDs experience a significant efficiency reduction due to the defects originating from the dry etching process. By controlling the current distribution via engineering the electrode size, electrons will be less concentrated in the defect region. In this work, we propose a blue InGaN/GaN compound parabolic concentrator micro-LED with a metallic sidewall to boost efficiency by combining both an optical dipole cloud model and electrical TCAD (Technology Computer-Aided Design) model. By merely modifying the p-GaN contact size, the external quantum efficiency (EQE) can be improved by 15.6%. By further optimizing the passivation layer thickness, the EQE can be boosted by 52.1%, which helps enhance the display brightness or lower power consumption.

To achieve wide-gamut and high-efficiency tandem white OLED (WOLED) microdisplays, we propose a new structure leveraging high-order antinodes and patterned microcavities. The color gamut coverages of 95% Rec. 2020 and 92% Rec. 2020 can be achieved in B/G/R tandem WOLED with a moderate microcavity and B/YG tandem WOLED with a strong microcavity, respectively. We have also boosted the optical efficiency by 62% for the tandem B/YG WOLED using the high-order antinodes at optimal conditions. Such a WOLED microdisplay helps reduce the power consumption of virtual reality (VR) and mixed reality (MR) displays while keeping a wide color gamut.