With the widespread application of lead-free solder, solder represented by the SAC series has been widely used. However, with the miniaturization and multifunctionalization of electronic devices, the distance between solder joints is becoming increasingly smaller, and the problem of electrochemical migration caused by Ag in the SAC series is gradually emerging. Therefore, it becomes imperative to develop a solder that has a melting point, mechanical properties, and other properties similar to those of the SAC series but does not contain silver. In this study, 1–3% of Bi and 1–3% of In were added to the Sn-0.7Cu solder to investigate the effects of these elements on the melting characteristics, microstructure, mechanical properties, wettability, and electrical conductivity of the Sn-0.7Cu solder. Due to the addition of Bi and In elements, the melting point of the Sn-0.7Cu solder was lowered, the shear strength was improved, and the solderability was enhanced, but the electrical conductivity was reduced. This article obtained the mechanism of the influence of Bi and In elements on the properties of the Sn-0.7Cu solder through experiments and theoretical analysis, providing a certain degree of theoretical support for the development of silver-free solder.

The development of Ag-free Sn solders has attracted significant attention due to the requirement of high-density electronic packaging. In this study, we investigate the Ni element on the microstructures and mechanical properties of Ag-free Sn-Cu-Bi-In solders. This paper details the microstructures and phases of the as-prepared Sn-Cu-Bi-In-Ni solders, as well as its mechanical properties. Specifically, the intermetallic compound (IMC) Cu₆Sn₅ is observed to be distributed in the Sn matrix, forming near-eutectic structures. The incorporation of Ni into Sn-Cu-Bi-In enhances the mechanical properties of the solder joints, including the shear strength and vibrational stability. In the joint obtained using the as-prepared Sn-Cu-Bi-In-Ni solders, a (Cu,Ni)₆Sn₅ IMC layer forms at the interface between Sn ball and Cu pad. The beneficial effects of Ni can be primarily attributed to its ability to adjust the mechanical properties and thermal expansion, enhancing the stability of solder joints. A TEM analysis reveals the closely packed atomic interface of Cu/(Cu,Ni)₆Sn₅ and (Cu,Ni)₆Sn₅/Sn, elucidating the joining mechanism involved.

Integrating nanocrystalline diamond (NCD) films on silicon chips has great practical significance and many potential applications, including high-power electronic devices, microelectromechanical systems, optoelectronic devices, and biosensors. In this study, we provide a solution for ensuring heterogeneous interface integration between silicon (Si) chips and NCD films using low-temperature bonding technology. This paper details the design and implementation of a magnetron sputtering layer on an NCD surface, as well as the materials and process for the connection layer of the integrated interface. The obtained NCD/Ti/Cu composite layer shows uniform island-like Cu nanostructures with 100~200 nm diameters, which could promote bonding between NCD and Si chips. Ultimately, a heterogeneous interface preparation of Si/Ag/Cu/Ti/NCD was achieved, with the integration temperature not exceeding 250 °C. The TEM analysis shows the closely packed atomic interface of the Cu NPs and deposited Ti/Cu layers, revealing the bonding mechanism.

The reliable joining of graphite and Cu holds significant promise for applications in electronic heat dissipation and sliding electrical contacts. However, the substantial differences in their physicochemical properties, poor wettability, and mismatch in coefficients of thermal expansion often result in low joint strength. In this study, a two-step joining strategy combines surface modification with low-temperature sintering, and this is proposed for fabrication of Cu/graphite joints. First, the graphite surface is modified using an AgCuTi active filler alloy under vacuum conditions. Ti preferentially segregates at and reacts with the graphite interface, leading to the formation of an Ag-Cu eutectic modified layer on the graphite surface. Subsequently, low-temperature joining of the modified graphite to a Cu substrate is achieved via a hot-pressing sintering process using a Ag paste. In the sintered joint, the Ag sintered layer forms sound metallurgical bonds with both the Cu substrate and the graphite-modified layer. When the sintering temperature is 250 °C, the joint exhibits a shear strength of 30 MPa, which is significantly higher than that of a directly brazed joint. This strategy effectively reduces thermal residual stress in the joint during cooling and shifts the failure location from the brittle graphite substrate to the ductile Ag sintered layer, thereby substantially enhancing the mechanical performance.

Low-temperature Cu sintering is used as a die-bonding strategy for the third-generation power device, and the Cu-sintered joints require long-term stability at elevated temperature. In this work, we investigate the thermal stability and microstructural evolution of the Cu interconnect joints with an ultra-thin sintered layer at the temperature of 250 °C in air. The as-prepared joint shows a dense well-bonded interface with low porosity before the thermal aging test. The average shear strength of the joints increases from 85.5 MPa to 91.3 MPa after aging up to 300 h. With further increase in aging time, the shear strength begins to decrease. However, the strength remains at a high level of 69.8 MPa even after 500 h of aging, satisfying the requirements for high-temperature stability. At short aging times, the porosity within the interface reduces slightly, and the fracture exhibits distinct ductile characteristics. When the aging time exceeds 300 h, the oxide content at the interface increases from the outer region toward the inner part, and aging cracks eventually appear at the edge of the sintered layer. Therefore, it is demonstrated that the dense and thin sintered layer limits oxygen diffusion, guaranteeing the high-temperature stability of the sintered joint.