In the current study, we report on the dielectric behavior of colossal-dielectric-constant Na_1/2La_1/2Cu₃Ti₄O₁₂ (NLCTO) ceramics prepared by mechanochemical synthesis and spark plasma sintering (SPS) at 850 °C, 900 °C, and 925 °C for 10 min. X-ray powder diffraction analysis showed that all the ceramics have a cubic phase. Scanning electron microscope observations revealed an increase in the average grain size from 175 to 300 nm with an increase in the sintering temperature. SPS NLCTO ceramics showed a room-temperature colossal dielectric constant (>10³) and a comparatively high dielectric loss (>0.1) over most of the studied frequency range (1 Hz–40 MHz). Two relaxation peaks were observed in the spectra of the electrical modulus and attributed to the response of grain and grain boundary. According to the Nyquist plots of complex impedance, the SPS NLCTO ceramics have semiconductor grains surrounded by electrically resistive grain boundaries. The colossal dielectric constant of SPS NLCTO ceramics was attributed to the internal barrier layer capacitance (IBLC) effect. The high dielectric loss is thought to be due to the low resistivity of the grain boundary of SPS NLCTO.

In this study, seeded zinc oxide (Z-ZnO) thin films were fabricated by a two-step electrochemical deposition process. Different annealing temperatures (300, 400, 500, and 600 °C) were investigated to determine the most effective temperature for the photocatalytic activity. Comprehensive analyses were conducted using X-Ray Diffraction (XRD), scanning electron microscopy (SEM), and UV–visible spectrophotometry. The XRD results confirmed the formation of a wurtzite hexagonal structure, with the highest crystallinity observed at 400 °C. The lowest band gap value, 3.29 eV, was also recorded for Z-ZnO thin film annealed at 400 °C. SEM images revealed that the thin film treated at 400 °C exhibited a well-defined and uniform structure, contributing to its enhanced properties. The photocatalytic efficiency of ZnO (without seeding layer) and Z-ZnO thin films annealed at 400 °C was evaluated through the degradation of tetracycline hydrochloride (TCH) to prove the effect of the presence of a primary seeding layer on ZnO 400 °C thin film efficiency. The degradation efficiency of ZnO thin film without seeding layer was 69.8%. By applying a seeding layer in Z-ZnO 400 °C thin film, the degradation efficiency has been increased to 75.8%. On the other hand, Z-ZnO 400 °C thin film achieved a high degradation efficiency of 82.6% over 300 min in the photoelectrocatalytic system. The obtained Z-ZnO thin films annealed at 400 °C are highly effective photocatalysts and photoelectrocatalysts, offering a significant potential for the degradation of pharmaceuticals and other pollutants in water.

In the current study, Bi_2/3Cu₃Ti₄O₁₂ (BCTO) ceramics were prepared by mechanical ball mill of the elemental oxides followed by conventional sintering of the powder without any pre-sintering heat treatments. The sintering temperature was in the range 950–990 °C, which is 100–150 °C lower than the previous conventional sintering studies on BCTO ceramics. All the ceramic samples showed body-centered cubic phase and grain size ≈ 2–6 μm. Sintering temperature in the range 950–975 °C resulted in comparatively lower dielectric loss and lower thermal coefficient of permittivity in the temperature range from −50 to 120 °C. All the BCTO ceramics showed reasonably high relative permittivity. The behavior of BCTO ceramics was correlated with the change in oxygen content in the samples with sintering temperature. This interpretation was supported by the measurements of the energy dispersive x-ray spectroscopy (EDS) elemental analysis and activation energy for conduction and for relaxation in the ceramics.

In the current work, we studied the effect of Ga⁺³ substitutions on the Ta⁺⁵ sites in Li_5+2xLa₃Ta_2-xGa_xO₁₂ (LLT-Ga) lithium conducting garnets (with x = 0.1–0.5) in order to enhance the ionic conductivity of these materials. The current materials are prepared by solid state reaction and their electrical properties are studied by impedance spectroscopy measurements. XRD data showed that cubic garnet phases are obtained for LLT-Ga garnets. The ionic conductivity increased by one order of magnitude for x = 0.3 composition with a value of ~4 × 10⁻⁵ S/cm compared to that of Li₅La₃Ta₂O₁₂ material. Moreover, the hopping frequency and the concentration of mobile Li⁺ ions were estimated from analysis of the conductivity spectra, and it was found that both the concentration and mobility of Li⁺ ions increased with increasing Ga⁺³ content in the materials. The dielectric and relaxation properties were studied in the dielectric permittivity and electric modulus formalisms. The current materials exhibited giant values of the dielectric constant of ε′ ~ 6500, originating from internal effects in the materials.