This paper presents the results of experimental studies of the influence of high-frequency magnetron sputtering power on the structural and electrophysical properties of nanocrystalline ZnO films. It is shown that at a magnetron sputtering power of 75 W in an argon atmosphere at room temperature, ZnO films have a relatively smooth surface and a uniform nanocrystalline structure. Based on the results obtained, the formation and study of resistive switching of transparent ITO/ZnO/ITO memristor structures as well as a crossbar array based on them were performed. It is demonstrated that memristor structures based on ZnO films obtained at a magnetron sputtering power of 75 W exhibit stable resistive switching for 1000 cycles between high resistance states (HRS = 537.4 ± 26.7 Ω) and low resistance states (LRS = 291.4 ± 38.5 Ω), while the resistance ratio in HRS/LRS is ~1.8. On the basis of the experimental findings, we carried out mathematical modeling of the resistive switching of this structure, and it demonstrated that the regions with an increase in the electric field strength along the edge of the upper electrode become the main sources of oxygen vacancy generation in ZnO film. A crossbar array of 16 transparent ITO/ZnO/ITO memristor structures was also fabricated, demonstrating 20,000 resistive switching cycles between LRS = 13.8 ± 1.4 kΩ and HRS = 34.8 ± 2.6 kΩ for all devices, with a resistance ratio of HRS/LRS of ~2.5. The obtained results can be used in the development of technological processes for the manufacturing of transparent memristor crossbars for neuromorphic structures of machine vision, robotics, and artificial intelligence systems.

The article describes the design features of the matrix nanoscale pointed field emission cathodes based on silicon carbide with a graphene film. The influence of the distance between electrodes, the distance between cathodes, the cathode height at the fixed values of the rounding-off radius of the top, the potential difference and the half-angle of the opening of cone forming the cathode is researched. The effective parameters of the matrix pointed field emission structure with nanoscale cathodes that provides homogeneity of the electrical field are determined.

The paper reports an investigation of planar field emission cathodes with a nanoscale interelectrode gap in high electric fields. The multilayer graphene film is used as a rectangular blade-shaped cathode. The authors carry out simulations of the distribution of the electric field strength along the emitting surface. Six types of distribution of the field enhancement factor are revealed by the simulations. The localized enhancement of the electric field strength at the blade corners is observed. The influence of the anode parameters on the emission homogeneity along the emitting surface of the cathode in strong electric fields is determined. The analysis of the simulation results suggests that an increase in the rounding-off radius of the emitter corner does not contribute to the complete elimination of the field enhancement factor heterogeneity. Additional anode modification makes it possible to obtain a homogeneous field enhancement factor along the emitting surface of the cathode and to improve the stability of the emission.

The distributions of the electric field strength, current density, and trajectories of emitted electrons have been simulated taking into account the topology of a graphene/SiC nanotip emitter. The ana