This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values R_HRS and R_LRS and the highest value of U_set = 2.7 ± 0.4 V. The samples with the ZnO:In and ZnO:Pd bottom electrode showed the lowest U_set and U_res values. An increase in the number of laser pulses from 1000 to 5000 was shown to lead to an increase in the thickness of the nanocrystalline ZnO film from 7.2 ± 2.5 nm to 53.6 ± 18.3 nm. The dependence of electrophysical parameters (electron concentration, electron mobility, and resistivity) on the thickness of the forming-free nanocrystalline ZnO film for the TiN/ZnO/W structure was investigated. The endurance test and homogeneity test for TiN/ZnO/W structures were performed. The structure Al₂O₃/TiN/ZnO/W with a nanocrystalline ZnO thickness 41.2 ± 9.7 nm was shown to be preferable for the manufacture of ReRAM and memristive neuromorphic systems due to the highest value of R_HRS/R_LRS = 2307.8 ± 166.4 and low values of U_set = 1.9 ± 0.2 V and U_res = −1.3 ± 0.5 V. It was demonstrated that the use of the TiN top electrode in the Al₂O₃/TiN/ZnO memristor structure allowed for the reduction in U_set and Ures and the increase in the R_HRS/R_LRS ratio. The results obtained can be used in the manufacturing of resistive-switching nanoscale devices for neuromorphic computing based on the forming-free nanocrystalline ZnO oxide films.

The paper is devoted to the research and development of high-efficiency solar cells with a planar perovskite n-i-p structure. A numerical model of this solar cell in the driftdiffusion approximation based on Poisson equation and continuity equations provided to determine their photoelectric characteristics and design optimization. The author considers the spectral photogeneration, bulk and surface recombination, transport charge carriers in perovskite and their collection by the electron and hole transport layers. As a result of the simulation, it was obtained efficiency dependence on perovskite absorber material thickness and lifetime (diffusion length) of the charge carriers. It is found that in addition to absorption coefficient optimal perovskite thickness is determined largely by the charge carrier diffusion length, and it has the upper limit in thickness of 500-600 nm.

This paper presents the results of experimental studies of the influence of high-frequency magnetron sputtering power on the structural and electrophysical properties of nanocrystalline ZnO films. It is shown that at a magnetron sputtering power of 75 W in an argon atmosphere at room temperature, ZnO films have a relatively smooth surface and a uniform nanocrystalline structure. Based on the results obtained, the formation and study of resistive switching of transparent ITO/ZnO/ITO memristor structures as well as a crossbar array based on them were performed. It is demonstrated that memristor structures based on ZnO films obtained at a magnetron sputtering power of 75 W exhibit stable resistive switching for 1000 cycles between high resistance states (HRS = 537.4 ± 26.7 Ω) and low resistance states (LRS = 291.4 ± 38.5 Ω), while the resistance ratio in HRS/LRS is ~1.8. On the basis of the experimental findings, we carried out mathematical modeling of the resistive switching of this structure, and it demonstrated that the regions with an increase in the electric field strength along the edge of the upper electrode become the main sources of oxygen vacancy generation in ZnO film. A crossbar array of 16 transparent ITO/ZnO/ITO memristor structures was also fabricated, demonstrating 20,000 resistive switching cycles between LRS = 13.8 ± 1.4 kΩ and HRS = 34.8 ± 2.6 kΩ for all devices, with a resistance ratio of HRS/LRS of ~2.5. The obtained results can be used in the development of technological processes for the manufacturing of transparent memristor crossbars for neuromorphic structures of machine vision, robotics, and artificial intelligence systems.

Aerodynamic flow past bodies of various geometrical shapes was studied, and the aerodynamic drag force was reduced through optimization of the body shape using a specially proposed method. The...