A novel cell topology for a vertical 1200 V SiC planar double-implanted MOSFET (DMOSFET) is proposed in this work. Based on the conventional linear cell topology and the calibrated two-dimensional (2D) technology computer-aided design (TCAD) model parameters, a novel cell topology with the insertion of P+ body implanted regions over a fractional part of the channel and junction field effect transistor (JFET) regions was designed and optimized to achieve a low high-frequency figure of merit (HF-FOM, R_on × C_gd). Utilizing three-dimensional (3D) TCAD simulations, the new proposed cell topology with optimized selected structure parameters exhibits an HF-FOM of 328.748 mΩ·pF, which is 10.02% lower than the conventional linear topology. It also shows an improvement in the switching performance, with an 11.73% reduction in switching loss. Moreover, the impact of source ohmic contact resistivity on the performance of the proposed cell topology was highlighted, indicating the dependency of the source ohmic contact resistivity on the switching performance. This research provides a new perspective for enhancing the switching performance of SiC MOSFETs in high-frequency applications, considering practical factors such as contact resistivity.