The preparation of thin-film transistors (TFTs) with InGaZnO (IGZO) channels using sol–gel technology has the advantages of simplicity in terms of process and weak substrate selectivity. We prepared a series of TFT devices with a top contact and bottom gate structure, in which the top contact was divided into rectangular and circular structures of drain/source electrodes. The field-effect performance of TFT devices with circular pattern drain/source electrodes was better than that with a traditional rectangular structure on both substrates. The uniform distribution of the potential in the circular electrode structure was more conducive to the regulation of carriers under the same channel length at different applied voltages. In addition, with the development of transparent substrate devices, we also constructed a hafnium oxide (HfO₂) insulation layer and an IGZO active layer on an indium tin oxide conductive substrate, and explored the effect of circular drain/source electrodes on field-effect properties of the semitransparent TFT device. The IGZO deposited on the HfO₂ dielectric layer by spin-coating can effectively reduce the surface roughness of the HfO₂ layer and optimize the scattering of carriers at the interface in TFT devices.

We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO₂ substrates by magnetron sputtering deposition to regulate the field-effect performance of TFTs. According to the analysis of field-effect properties before and after annealing in different atmospheres, the performance of TFT devices with ZnO/AZO/SiO₂/Si double-active-layers was obviously better than that with single AZO or ZnO active layer and inverted AZO/ZnO/SiO₂/Si double-active-layers in the device structure. The active layer with higher carrier concentration (AZO in this case) was closer to the dielectric layer, which was more favorable for carrier regulation in TFT devices. In addition, the annealed device had a lower on/off ratio (I_on/I_off), easier-to-reach on-state, and higher mobility. Furthermore, the performance of the devices annealed under vacuum condition was obviously better than that annealed under air atmosphere. The I_on/I_off could reach 6.8 × 10⁵ and the threshold voltage was only 2.9 V.

Printing technology will improve the complexity and material waste of traditional deposition and lithography processes in device fabrication. In particular, the printing process can effectively control the functional layer stacking and channel shape in thin-film transistor (TFT) devices. We prepared the patterning indium gallium zinc oxide (IGZO) semiconductor layer with Ga, In, and Zn molar ratios of 1:2:7 on Si/SiO₂ substrates. And the patterning source and drain electrodes were printed on the surface of semiconductor layers to construct a TFT device with the top contact and bottom gate structures. To overcome the problem of uniform distribution of applied voltages between electrode centers and edges, we investigated whether the circular arc channel could improve the carrier regulation ability under the field effect in printed TFTs compared with a traditional structure of rectangular symmetry and a rectangular groove channel. The drain current value of the IGZO TFT with a circular arc channel pattern was significantly enhanced compared to that of a TFT with rectangular symmetric source/drain electrodes under the corresponding drain–source voltage and gate voltage. The field effect properties of the device were obviously improved by introducing the arc-shaped channel structure.

In this paper, composite structures were fabricated by incorporating silver nanowires (AgNWs) with various metal oxides via the sol–gel method. This approach enhanced the electrical performance of AgNW-based transparent electrodes while simultaneously improving their stability under damp heat conditions and modifying the local medium environment surrounding the AgNW meshes. The randomly distributed AgNW meshes fabricated via drop-coating were treated with plasma to remove surface organic residues and reduce the inter-nanowire contact resistance. Subsequently, a zinc oxide (ZnO) coating was applied to further decrease the sheet resistance (R_sheet) value. The pristine AgNW mesh exhibits an R_sheet of 17.4 ohm/sq and an optical transmittance of 93.06% at a wavelength of 550 nm. After treatment, the composite structure achieves a reduced R_sheet of 8.7 ohm/sq while maintaining a high optical transmittance of 92.20%. The use of AgNW meshes as window electrodes enhances electron injection efficiency and facilitates the coupling mechanism between localized surface plasmon resonances and excitons. Compared with conventional ITO transparent electrodes, the incorporation of the AgNW mesh leads to a 17-fold enhancement in ZnO emission intensity under identical injection current conditions. Moreover, the unique scattering characteristics of the AgNW and metal oxide composite structure effectively reduce photon reflection at the device interface, thereby broadening the angular distribution of emitted light in electroluminescent devices.