Transparent conducting flexible electrodes composed of silver nanowires (Ag NWs) and graphene oxide (GO) were fabricated. We describe a simple spraying method that was used to obtain the Ag NW networks, which were subsequently subjected to electrical sintering to ensure good welding where the Ag NWs overlap. This fast and simple process resulted in Ag NW networks that exhibited a two-fold reduction in sheet resistance (Rs) when compared with pristine Ag NW networks. The composite films had a Rs below 60 ohm/sq, >86% transparency over the visible spectrum, and no observable degradation after two months. Additionally, the good thermal conductivity of the metallic silver within the composite films allowed them to be used as effective transparent heaters.

The preparation of thin-film transistors (TFTs) with InGaZnO (IGZO) channels using sol–gel technology has the advantages of simplicity in terms of process and weak substrate selectivity. We prepared a series of TFT devices with a top contact and bottom gate structure, in which the top contact was divided into rectangular and circular structures of drain/source electrodes. The field-effect performance of TFT devices with circular pattern drain/source electrodes was better than that with a traditional rectangular structure on both substrates. The uniform distribution of the potential in the circular electrode structure was more conducive to the regulation of carriers under the same channel length at different applied voltages. In addition, with the development of transparent substrate devices, we also constructed a hafnium oxide (HfO₂) insulation layer and an IGZO active layer on an indium tin oxide conductive substrate, and explored the effect of circular drain/source electrodes on field-effect properties of the semitransparent TFT device. The IGZO deposited on the HfO₂ dielectric layer by spin-coating can effectively reduce the surface roughness of the HfO₂ layer and optimize the scattering of carriers at the interface in TFT devices.

The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices.

We have prepared an ultra-thin flexible transparent conductive electrode with high folding endurance composed of randomly arranged silver nanowires (AgNWs) embedded in polydimethylsiloxane (PDMS). A simple preparation method was performed to connect a glass substrate coated with a AgNW network and a glass substrate coated with PDMS. The glass substrate was then removed after the PDMS solidified, and the AgNW–PDMS composite film was peeled off. Moreover, the problem of the high contact resistance caused by the random arrangement of AgNWs was solved by the local joule heat generated by applying voltage to both sides of the AgNW–PDMS composite structure to weld the overlapping AgNWs. The sheet resistance (R _s) of AgNW–PDMS composite films with different AgNW deposition concentrations decreased by 46.4%–75.8% through this electro-sintering treatment. The embedded structure of the AgNW–PDMS composite ensures better voltage resistance and environmental stability under high temperature and humidity conditions compared with a AgNW network attached to a glass substrate. Additionally, the substrate-free, excellent elasticity and high resilience characteristics resulted in the R _s value of the same composite electrode only increasing by 2.9 ohm sq⁻¹ after folding four times. The advantage of the metal thermal conductivity makes the joule heat generated by electric injection rapidly diffuse and dissipate in the AgNW-based transparent heater with faster response time and smaller voltage drive than indium tin oxide.

We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO₂ substrates by magnetron sputtering deposition to regulate the field-effect performance of TFTs. According to the analysis of field-effect properties before and after annealing in different atmospheres, the performance of TFT devices with ZnO/AZO/SiO₂/Si double-active-layers was obviously better than that with single AZO or ZnO active layer and inverted AZO/ZnO/SiO₂/Si double-active-layers in the device structure. The active layer with higher carrier concentration (AZO in this case) was closer to the dielectric layer, which was more favorable for carrier regulation in TFT devices. In addition, the annealed device had a lower on/off ratio (I_on/I_off), easier-to-reach on-state, and higher mobility. Furthermore, the performance of the devices annealed under vacuum condition was obviously better than that annealed under air atmosphere. The I_on/I_off could reach 6.8 × 10⁵ and the threshold voltage was only 2.9 V.

Printing technology will improve the complexity and material waste of traditional deposition and lithography processes in device fabrication. In particular, the printing process can effectively control the functional layer stacking and channel shape in thin-film transistor (TFT) devices. We prepared the patterning indium gallium zinc oxide (IGZO) semiconductor layer with Ga, In, and Zn molar ratios of 1:2:7 on Si/SiO₂ substrates. And the patterning source and drain electrodes were printed on the surface of semiconductor layers to construct a TFT device with the top contact and bottom gate structures. To overcome the problem of uniform distribution of applied voltages between electrode centers and edges, we investigated whether the circular arc channel could improve the carrier regulation ability under the field effect in printed TFTs compared with a traditional structure of rectangular symmetry and a rectangular groove channel. The drain current value of the IGZO TFT with a circular arc channel pattern was significantly enhanced compared to that of a TFT with rectangular symmetric source/drain electrodes under the corresponding drain–source voltage and gate voltage. The field effect properties of the device were obviously improved by introducing the arc-shaped channel structure.