The impact of delta-doping modulation and electric field influence within a nanostructure consisting of three GaAs quantum wells (QWs) separated by AlGaAs barriers was investigated. The quantized energy levels, Fermi energy, wavefunctions, self-consistent potential, and electron density distribution were evaluated by a self-consistent solution of the Schrödinger and Poisson equations using the finite element method within the FEniCS project in Python. The results indicate that increasing the electric field reduces energy levels and Fermi energy. In addition, the delta-doping position and electric field significantly affect the self-consistent potential and electron density distribution. This study provides a possibility to tailor optical properties, such as the linear absorption coefficient and photoluminescence, by adjusting geometrical and non-geometrical parameters, including donor density, enhancing the functionality of doped QWs in designing high electron mobility transistors.

Through this paper, we exhibit the effects of electric and magnetic fields on the linear and third-order nonlinear optical absorption coefficients (OACs) in symmetric InGaN/GaN double QWs considering different confinement potential shapes (squared, U-shaped, V-shaped) under electric and magnetic fields are theoretically investigated. The magnetic field is taken in-plane while the electric field is oriented along the growth direction of the nanostructure. Our calculations have been performed within the effective-mass approximation and the compact density-matrix approach. We used the finite element method to solve numerically the Schrodinger equation considering various shaped confinement potentials. Our results reveal that the increase in the magnetic and electric fields blue-shifted the OAC's peak positions and improves their associated amplitudes. Furthermore, we have also found that the optical absorption coefficients are very important in squared-shape compared to than in U- and V-shape.