基于应变Si/（001）Si1-xGex材料价带E（k）-k关系模型，研究获得了其沿不同晶向的空穴有效质量.结果表明，与弛豫材料相比，应变Si/（001）Si1-xGex材料价带带边（重空穴带）、亚带边（轻空穴带）空穴有效质量在某些k矢方向变化显著，各向异性更加明显.价带空穴有效质量与迁移率密切相关，该研究成

Compared to indirect bandgap Ge semiconductors, carrier radiative recombination efficiencies of pseudo-direct bandgap Ge semiconductors (PD-Ge) with low-intensity tensile strain and direct bandgap Ge_1–x Sn _x alloy (D-Ge_1–x Sn _x ) with high Sn component are high. Since the carrier mobility of PD-Ge and D-Ge_1–x Sn _x is high, they can be applied to high-speed and high-performance electronic devices. As a result, PD-Ge and D-Ge_1–x Sn _x have potential for monolithic optoelectronic integration chips (MOEIC). The energy bandgap of work area which in LED, waveguide and detector of MOEIC should meet relationship E_{g, waveguide} > E_{g, LED} > E_{g, detector}. To achieve MOEIC, the band structures of PD-Ge and D-Ge_1–x Sn _x need to be modulated. The band structures can be modulated by applying uniaxial stress using SiN film, and the process is compatible with MOEIC. In this paper, based on kp band theory combining with deformation potential, energy bandgap models of PD-Ge and D-Ge_1–x Sn _x under uniaxial stress are studied, and then change rules are proposed. It aims to provide important theoretical reference for design and implementation of Ge-based MOEIC.