The electromagnetic field (EMF) has a great impact on our body. It has been successfully used in physiotherapy for the treatment of bone disorders and osteoarthritis, as well as for cartilage regeneration or pain reduction. Recently, EMFs have also been applied in in vitro experiments on cell/stem cell cultures. Stem cells reside in almost all tissues within the human body, where they exhibit various potential. These cells are of great importance because they control homeostasis, regeneration, and healing. Nevertheless, stem cells when become cancer stem cells, may influence the pathological condition. In this article we review the current knowledge on the effects of EMFs on human adult stem cell biology, such as proliferation, the cell cycle, or differentiation. We present the characteristics of the EMFs used in miscellaneous assays. Most research has so far been performed during osteogenic and chondrogenic differentiation of mesenchymal stem cells. It has been demonstrated that the effects of EMF stimulation depend on the intensity and frequency of the EMF and the time of exposure to it. However, other factors may affect these processes, such as growth factors, reactive oxygen species, and so forth. Exploration of this research area may enhance the development of EMF-based technologies used in medical applications and thereby improve stem cell-based therapy and tissue engineering.

Magnetic fields have a great impact on processes within plants. In our experiment, radish seeds (Raphanus sativus) were exposed to a stationary magnetic field (with an intensity of 8 mT and 20 mT) and variable magnetic fields (with an intensity of 6 mT and a frequency of 50 Hz). Two time intervals of exposure were selected: 3 min and 12 min. After exposure, treated seeds were compared with the control seeds (without magnetic field exposure) in the following categories: seedling length, germination rate index (GRI), vigour index, and seed germination. The results revealed that magnetic fields increased the rate of germination, vigour index, and GRI for all samples treated with stationary magnetic field. It is difficult to distinguish a specific form of dependence between the measured parameters and the intensity of the magnetic fields and the selected time intervals. The most promising results were obtained from the sample that was exposed to a stationary magnetic field intensity of 20 mT at 12 min. All measured values decreased when the seeds were exposed to variable magnetic fields at the exposure time of 12 min.

In this study, titanium dioxide/copper oxide thin-film solar cells were prepared using the reactive direct-current magnetron sputtering technique. The influence of the deposition time of the top Cu contact layer on the structural and electrical properties of photovoltaic devices was analyzed. The structural and morphological characterization of the TiO₂/CuO/Cu₂O solar cells was fully studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), and current–voltage (I-V) characteristics. Additionally, using van der Pauw sample geometries, the electrical properties of the titanium dioxide and copper oxide layers were investigated. From the XRD study, solar cells were observed in cubic (Cu₂O), monoclinic (CuO), and Ti₃O₅ phases. In addition, the crystallite size and dislocation density for copper oxide layers were calculated. Basic morphological parameters (thickness, mechanism of growth, and composition of elements) were analyzed via scanning electron microscopy. The thicknesses of the titanium dioxide and copper oxide layers were in the range of 43–55 nm and 806–1223 nm, respectively. Furthermore, the mechanism of growth and the basic composition of the elements of layers were analyzed. The I-V characteristic curve confirms the photovoltaic behavior of two titanium dioxide/copper oxide thin-film structures. The values of short-circuit current density (J_sc) and open-circuit voltage (V_oc) of the solar cells were: 4.0 ± 0.8 µA/cm², 16.0 ± 4.8 mV and 0.43 ± 0.61 µA/cm², 0.54 ± 0.31 mV, respectively. In addition, the authors presented the values of I_sc, P_max, FF, and R_sh. Finally, the resistivity, carrier concentration, and mobility are reported for selected layers with values reflecting the current literature.

The problem of copper diffusion in semiconductor devices has been known for several decades as copper has been used as an interconnecting (bonding) metal and has been intensively studied due to its high diffusion coefficient. The influence of the intensive diffusion of copper, depending on the technology of the deposition regimes, has been investigated in thin-film solar cells based on copper, zinc, and titanium oxides obtained by DC-reactive magnetron sputtering. The observed effect significantly changes the structure of the CuO films and affects the properties of the TiO₂:ZnO/CuO photocell. The composition of the layers and the copper diffusion in the photocells were studied using a cross-section obtained by scanning electron microscopy (SEM). The influence of the copper diffusion in the layers on the current–voltage (I-V) and power–voltage (P-V) characteristics and optical properties was investigated. The photoelectric behavior of two structures of thin-film solar cells was confirmed through -V research. The values of the open-circuit voltage (V_OC) and short-circuit current density (J_SC) of photovoltaic devices reached (11 ÷ 15) mV and (6.1 ÷ 6.8) μA, respectively. Furthermore, the Pmax, FF, RS, and RSH values were calculated and analyzed. The difference in the composition of the upper layer of the structure caused changes in the reflection spectra in the wavelength range of 190–2500 nm and, depending on the wavelength, varies in the range of 0–27%.