Grzegorz Wisz

Prof. Dr. Grzegorz Wisz

Institute of Material Engineering, University of Rzeszów, Rzeszów, Podkarpackie, Poland
orcid

Research Focus & Metrics

Academic Career Length

31Years (1996-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 June 2019 in Optical Materials
Verified
Journal Article
Closed access
Lyubomyr NykyruyLyubomyr Nykyruy
Lyubomyr Nykyruy
Rostyslav YavorskyiRostyslav Yavorskyi
Rostyslav Yavorskyi
ZZZ.R. Zapukhlyak
Z.R. Zapukhlyak
Grzegorz WiszGrzegorz Wisz
Grzegorz Wisz
PPPiotr Potera
Piotr Potera

19 June 2019 in Materials Research Express
Verified
Journal Article
Closed access
Paulina Sawicka-ChudyPaulina Sawicka-Chudy
Paulina Sawicka-Chudy
SSStarowicz Starowicz
Starowicz Starowicz
Grzegorz WiszGrzegorz Wisz
Grzegorz Wisz
Rostyslav YavorskyiRostyslav Yavorskyi
Rostyslav Yavorskyi
ZZZ Zapukhlyak
Z Zapukhlyak
MCM Cholewa
M Cholewa

4 April 2017 in Discover Nano
Verified
Journal Article
Open access
PDF file
Grzegorz WiszGrzegorz Wisz
Grzegorz Wisz
Ihor S. VirtIhor S. Virt
Ihor S. Virt
PSP. Sagan
P. Sagan
PPPiotr Potera
Piotr Potera
Rostyslav YavorskyiRostyslav Yavorskyi
Rostyslav Yavorskyi
The structural, optical, and electrical properties of zinc oxide (ZnO) layers manufactured at different process conditions were investigated. ZnO epitaxial layers were grown on silicon, glass, and ITO/glass substrates by pulsed laser deposition (PLD) technique. The influence of power beam, substrate temperature, and deposition time on films properties was analysed. Morphological features of the film surface were investigated by scanning electron microscopy. A structural study shown planar orientation of films at low temperatures of substrate, but the columnar type of growth originated in temperature enhances. Electrical properties were determined in the temperature range 300–500 K. It was shown that the type of films conductivity is metallic and it is limited by charge transfer across grain boundaries.

1 January 2020 in AIP Advances
Verified
Journal Article
Open access
PDF file
Paulina Sawicka-ChudyPaulina Sawicka-Chudy
Paulina Sawicka-Chudy
MSMaciej Sibiński
Maciej Sibiński
ERElżbieta Rybak-Wilusz
Elżbieta Rybak-Wilusz
MCMarian Cholewa
Marian Cholewa
Grzegorz WiszGrzegorz Wisz
Grzegorz Wisz
Rostyslav YavorskyiRostyslav Yavorskyi
Rostyslav Yavorskyi
Copper oxide-titanium dioxide (TiO2) p–n junctions are promising materials for photovoltaic devices and may reduce production costs due to their low cost and inexpensive production methods compared with silicon solar cells. The present review compares solar cells made with copper oxides combined with TiO2–TiO2/Cu2O and TiO2/CuO heterojunctions, and “cascade heterojunction systems.” First, we describe the main properties of titanium (iv) dioxide (TiO2), cuprous oxide (Cu2O), and cupric oxide (CuO), and their potential applications. Next, we explain the concept of copper oxide and TiO2 heterojunctions. We summarize and present the photovoltaic characteristics (efficiency, fill factor, circuit current density, and open circuit voltage), thickness, preparation method, and electrode type for solar cells comprising copper oxide and TiO2. The efficiency of the solar cells ranged from 0.0005% to 1.62%. The thickness of the TiO2 and cupric oxide layers ranged from 0.06 to 16 µm, and from 0.18 to 1.5 µm, respectively, depending on the fabrication method. Additionally, we review and discuss the available combinations of copper oxide with other materials (Cu2O with ZnO, CuO with ZnO, and CuO with Si), as well as the effect of the thickness of the copper (i) oxide and copper (ii) oxide on the solar cell performance. Finally, we present aspects to improve the conversion efficiency of heterojunction solar cells with copper oxides combined with TiO2. This review will be useful for the construction and further development of thin-film solar cells.

19 April 2011 in Journal of Materials Science: Materials in Electronics
Verified
Journal Article
Open access
PDF file
GLGrzegorz Luka
Grzegorz Luka
TKT. A. Krajewski
T. A. Krajewski
BWBartłomiej Slawomir Witkowski
Bartłomiej Slawomir Witkowski
Grzegorz WiszGrzegorz Wisz
Grzegorz Wisz
Ihor S. VirtIhor S. Virt
Ihor S. Virt
Marek GodlewskiMarek Godlewski
Marek Godlewski
We obtained zinc oxide films doped with aluminum using atomic layer deposition (ALD). Their morphology, growth mode, optical and electrical properties are studied. Al content dependence is analyzed. Carrier scattering mechanisms in ZnO:Al (AZO) films are investigated from conductivity versus temperature measurements. We also discuss how the film thickness affects its resistivity and optical transmission. The obtained film resistivities, i.e. 7 × 10−4 Ωcm, belong to the lowest reported so far for transparent ZnO:Al films grown by the ALD method.

1 May 2018 in Journal of Physics: Conference Series
Verified
Conference Paper
Open access
PDF file
Paulina Sawicka-ChudyPaulina Sawicka-Chudy
Paulina Sawicka-Chudy
MSMaciej Sibiński
Maciej Sibiński
Grzegorz WiszGrzegorz Wisz
Grzegorz Wisz
ERElżbieta Rybak-Wilusz
Elżbieta Rybak-Wilusz
MCMarian Cholewa
Marian Cholewa