In vivo recordings of cone photoreceptor outputs in a tetrachromate reveal efficient ancestral strategy for color processing.

The temperature dependence of energy gap-related emission from InNAsSb layers was studied by Fourier transform infrared photoluminescence (PL) spectroscopy. The shape of PL peak was analyzed using a theoretical expression, which takes into account both the localized and free carrier emission. Proper accounting for those two effects is very important for an accurate determination of the Varshni and Bose-Einstein parameters from PL data. It is shown that nitrogen incorporation has a very week effect on the temperature induced bandgap reduction in InNAsSb alloys and that the Varshni and Bose-Einstein parameters are very close to those observed in InAs and InSb.

Diffraction-limited two-photon microscopy permits minimally invasive optical monitoring of neuronal activity. However, most conventional two-photon microscopes impose significant constraints on the size of the imaging field-of-view and the specific shape of the effective excitation volume, thus limiting the scope of biological questions that can be addressed and the information obtainable. Here, employing a non-telecentric optical design, we present a low-cost, easily implemented and flexible solution to address these limitations, offering a several-fold expanded three-dimensional field of view. Moreover, rapid laser-focus control via an electrically tunable lens allows near-simultaneous imaging of remote regions separated in three dimensions and permits the bending of imaging planes to follow natural curvatures in biological structures. Crucially, our core design is readily implemented (and reversed) within a matter of hours, making it highly suitable as a base platform for further development. We demonstrate the application of our system for imaging neuronal activity in a variety of examples in zebrafish, mice and fruit flies.

Optical properties of molecular beam epitaxially grown type II “W” shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical material quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.