Optical properties of molecular beam epitaxially grown type II “W” shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical material quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.

GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at ~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to ~1 µm at n ~ 10²⁰ cm⁻³ doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1–10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 10¹⁸ cm⁻³ are highly transparent with the absorption coefficient below 3 cm⁻¹ at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

$\mathrm{Al}\mathrm{Ga}\mathrm{N}∕\mathrm{Ga}\mathrm{N}$ transistor heterostructures, caped by $\sim 2\mathrm{nm}$ GaN layer, were investigated by contactless electroreflectance (CER) spectroscopy at room temperature. Below the AlGaN-related transition CER spectra have shown a clear resonance at the energy of $\sim 3.7\mathrm{eV}$ , i.e., at much higher energy than the GaN band gap energy. The observed feature has been connected with the optical transition within the GaN cap layer. It was concluded that a surface GaN quantum well has been created by the deposition of nominally undoped (or Si-doped) GaN cap layer on $\mathrm{Al}\mathrm{Ga}\mathrm{N}∕\mathrm{Ga}\mathrm{N}$ transistor heterostructures.

Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution was observed in the mid-infrared range of 2.5–4 μm. A range of compositions of the InAs_1−ySb_y ternary solid solution has been established, where the energy resonance between the band gap and the splitting-off band in the valence band of the semiconductor can be achieved. Due to the impact of nonradiative Auger recombination processes, different temperature dependence of photoluminescence intensity was found for the barrier layer and the narrow-gap active region, respectively. It was shown that efficient high-temperature photoluminescence can be achieved by suppressing the nonradiative Auger recombination (CHHS) process. Increased temperature, for which the energy gap is lower than the split-off band energy, leads to violation of the resonance condition in narrow gap antimonide compounds, which explains the observed phenomenon. This finding might influence future application of the investigated material systems in mid-infrared emitters used for, e.g., optical gas sensing.

This paper evaluates the key factors influencing the design of optical wireless communication (OWC) systems operating in the mid-infrared range. The performed analysis has shown that working in this spectral “window”, compared to other wavelengths, is more effective in reducing the attenuation of radiation. The main goal was to verify the capabilities of the “on-shelf” interband cascade (IC) laser in the context of OWC system construction, considering its output power, modulation rate, room temperature operation, and integrated structure. For this purpose, a lab model of a data link with IC laser has been developed. Based on its main parameters, the estimation of signal-to-noise power ratio versus data link range was made. That range was about 2 km for a case of low scintillation and relatively low visibility. In the experimental part of the work, the obtained modulation rate was 70 MHz for NRZ (non-return-to-zero) format coding. It is an outstanding result taking into consideration IC laser operated at room temperature.

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665In0.335AsxSb1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.