Prof. Jordi Suñé

Jordi Suñé is a full professor of Electronics at the Universitat Autonoma de Barcelona (UAB). He is the coordinator of the NANOCOMP research group. His main contributions are in the area of gate oxide reliability for CMOS technology. In terms of research achievements in this field, he was upgraded to an IEEE Fellow for contributions to the understanding of gate oxide failure and reliability methodology. In 2008, he received the IBM Faculty award for a long-lasting collaboration with IBM Microelectronics in this field. Since 2008, he has worked in the area of memristive devices and their application to neuromorphic circuits. In 2010, he received the ICREA ACADEMIA award and, in 2012 and 2013, he was awarded the Chinese Academy of Sciences Professorship for Senior International Scientists, for collaboration with IMECAS (Beijing, China). Recently, he launched a new research group/network (neuromimeTICs.org) dedicated to the application of neuromorphic electronics to artificial intelligence and to dissemination activities. He has (co)authored more than 400 papers (h-index = 44) in international journals and relevant conferences, including 14 IEDM papers, several invited papers, and five tutorials on oxide reliability at the IEEE-IRPS. At present, he is the local UAB coordinator of a European project on emerging non-volatile memories embedded in microprocessors for automotive, secure, and general electronics applications.