Solar light is a renewable source of energy that can be used and transformed into electricity using clean energy technology. In this study, we used direct current magnetron sputtering (DCMS) to sputter p-type cuprous oxide (Cu₂O) films with different oxygen flow rates (f_O2) as hole-transport layers (HTLs) for perovskite solar cells (PSCs). The PSC device with the structure of ITO/Cu₂O/perovskite/[6,6]-phenyl-C₆₁-butyric acid methyl ester (PC₆₁BM)/bathocuproine (BCP)/Ag showed a power conversion efficiency (PCE) of 7.91%. Subsequently, a high-power impulse magnetron sputtering (HiPIMS) Cu₂O film was embedded and promoted the device performance to 10.29%. As HiPIMS has a high ionization rate, it can create higher density films with low surface roughness, which passivates surface/interface defects and reduces the leakage current of PSCs. We further applied the superimposed high-power impulse magnetron sputtering (superimposed HiPIMS) derived Cu₂O as the HTL, and we observed PCEs of 15.20% under one sun (AM1.5G, 1000 Wm⁻²) and 25.09% under indoor illumination (TL-84, 1000 lux). In addition, this PSC device outperformed by demonstrating remarkable long-term stability via retaining 97.6% (dark, Ar) of its performance for over 2000 h.

High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses the deposition of copper nitride thin films via HiPIMS at different deposition pressures and then examines the impact of the deposition pressure on the structural and electrical properties of Cu₃N films. At low deposition pressure, Cu-rich Cu₃N films were obtained, which results in the n-type semiconductor behavior of the films. When the deposition pressure is increased to above 15 mtorr, Cu₃N phase forms, leading to a change in the conductivity type of the film from n-type to p-type. According to our analysis, the Cu₃N film deposited at 15 mtorr shows p-type conduction with the lowest resistivity of 0.024 Ω·cm and the highest carrier concentration of 1.43 × 10²⁰ cm⁻³. Furthermore, compared to the properties of Cu₃N films deposited via conventional direct current magnetron sputtering (DCMS), the films deposited via HiPIMS show better conductivity due to the higher ionization rate of HiPIMS. These results enhance the potential of Cu₃N films’ use in smart futuristic devices such as photodetection, photovoltaic absorbers, lithium-ion batteries, etc.