Total ionizing dose (TID) radiation response of the custom bandgap voltage reference (BGR) fabricated with 65 nm, 40 nm and 28 nm commercial bulk CMOS technologies is investigated. TID response is assessed employing Co-60 gamma ray source. The measurements indicate that the voltage reference is reduced by 5.67% in 28 nm, 0.56% in 40 nm and increased by 1.28% in 65 nm devices under irradiation up to 1.2 Mrad(Si) TID. After 48 hours of annealing, the voltage reference changes are just -1.84% in 28 nm, 0.14% in 40 nm and 1.14% in 65 nm. The obtained results demonstrate that the custom BGR has naturally superior TID response due to the circuit design margins.

Single event effect (SEE) response of a custom transmitter in nanometer technology is investigated in this paper. Following the optimization of complementary metal-oxide-semiconductor (CMOS) size, two 16 Gbps transmitters are fabricated using commercial bulk planar and bulk fin field-effect transistor (FinFET) CMOS technologies. A comparison of the radiation responses between bulk planar and bulk FinFET devices in the trans-mitter was conducted through the pulsed laser and heavy ion experiments. The results of the heavy ion experiments showed that three types of single event transients (SETs) appeared in the planar technology transmitter, while the FinFET transmitter witnessed only one type of SET. The SET cross sections in planar transmitter were respectively 43 times and 49 times those of the FinFET transmitter at linear energy transfers of $13.1\ \text{MeV}\cdot \text{cm}^{2}/\text{mg}$ and $21.8\ \text{MeV}\cdot\text{cm}^{2}/\text{mg}$. The pulsed laser experiments demonstrated that the transmitters in both the planar and FinFET technologies can survive the laser irradiation with laser energies of 100 pJ and 160 pJ, respectively. These experimental results indicate that FinFET CMOS exhibits a naturally superior SEE tolerance.