As semiconductor packaging technologies face limitations, through-silicon via (TSV) technology has emerged as a key solution to extending Moore’s law by achieving high-density, high-performance microelectronics. TSV technology enables enhanced wiring density, signal speed, and power efficiency, and offers significant advantages over traditional wire-bonding techniques. However, achieving fine-pitch and high-density interconnects remains a challenge. Solder flip-chip microbumps have demonstrated their potential to improve interconnect reliability and performance. However, the environmental impact of lead-based solders necessitates a shift to lead-free alternatives. This review highlights the transition from Sn-Pb solders to lead-free options, such as Sn-Ag, Sn-Cu, Sn-Ag-Cu, Sn-Zn, and Bi- or In-based alloys, driven by regulatory and environmental considerations. Although lead-free solders address environmental concerns, their higher melting points pose challenges such as thermal stress and chip warping, which affect device reliability. To overcome these challenges, the development of low-melting-point solder alloys has gained momentum. This study examines advancements in low-temperature solder technologies and evaluates their potential for enhancing device reliability by mitigating thermal stress and ensuring long-term stability.

This paper reviews tab-to-busbar interconnections in lithium-ion battery packs, focusing on resistance welding (RW), laser beam welding (LBW), and ultrasonic welding (USW). The functional roles of tabs and busbars and typical material choices (Al-, Cu-, and Ni-plated Cu) are outlined. Subsequently, the processes are compared in terms of heat input, interfacial metallurgy, electrical resistance, mechanical robustness, and manufacturability. USW, as a solid-state method, suppresses porosity and limits Al-Cu intermetallic growth, but is sensitive to thickness, stack geometry, and tool wear. LBW enables high-speed, automated production with precise energy delivery, yet requires careful control to mitigate spatter, porosity, and brittle IMCs in dissimilar joints. RW remains cost-effective and flexible but can suffer from electrode wear and variability with highly conductive stacks. This review also summarizes the effect of the busbar material (Al versus Cu) and thickness on the connection resistance and temperature increase under a high current. No single process is universally superior, and the selection should match the stack-up, reliability targets, and production constraints. This paper aims to provide an overview of recent and conventional research trends for each welding method and to introduce selected non-traditional approaches, thereby presenting a range of viable options for future applications.

Three-dimensional integrated circuit (3D IC) technology is an innovative approach in the semiconductor industry aimed at enhancing performance and reducing power consumption. However, thermal management issues arising from high-density stacking pose significant challenges. Carbon nanotubes (CNTs) have gained attention as a promising material for addressing the thermal management problems of through-silicon vias (TSVs) owing to their unique properties, such as high thermal conductivity, electrical conductivity, excellent mechanical strength, and low coefficient of thermal expansion (CTE). This paper reviews various applications and the latest research results on CNT-based TSVs. Furthermore, it proposes a novel TSV design using CNT–copper–tin composites to optimize the performance and assess the feasibility of CNT-based TSVs.