Exploring the intricate interplay between magnetism and superconductivity is crucial for unveiling the underlying mechanisms of unconventional superconductivity. Here, we report on the magnetotransport evidence for the coexistence of a two-dimensional (2D) superconducting state and a 2D ferromagnetic state at the interface between amorphous CaZrO₃ film and (111)-oriented KTaO₃ single crystal. Remarkably, the fingerprint of ferromagnetism, i.e., hysteretic magnetoresistance loops, is observed in the superconducting state. The butterfly-shaped hysteresis with twin peaks emerges against the background of superconducting zero resistance, and the peak amplitude increases with the sweep rate of the magnetic field, indicating that the magnetization dynamics are at play in the superconducting state. Moreover, the magnetoresistance hysteresis is strongly dependent on temperature, achieving a maximum near the superconducting transition temperature. This behavior is well described by the thermal activated phase slip model. Density function theory (DFT) calculations suggest that the magnetic moment is primarily contributed by the Ta 5d_yz orbital, and the Stoner ferromagnetism is identified. Our findings provide new insights into the interaction of magnetism and superconductivity at KTaO₃-based oxide heterointerfaces.

Antiferromagnetic spintronics, leveraging the distinct properties of antiferromagnetic materials, represents a rapidly advancing frontier in the realm of magnetic memory devices. Theoretical and experimental research has significantly propelled this field forward. Notably, antiferromagnetic materials, with their rapid spin dynamics and reduced sensitivity to stray magnetic fields, emerge as superior candidates for spintronic memory applications compared to traditional ferromagnets. This paper begins by evaluating the potential of antiferromagnetism as a robust spin source and its inherent advantage in field-free switching, pivotal for enhancing memory device efficiency. We then critically review the innovative mechanisms for manipulating and detecting the magnetic states of antiferromagnets, underscoring their integral role in the functional advancement of magnetic memory technologies. Subsequently, we explore a range of magnetic memory devices that integrate antiferromagnets into various functional layers, showcasing their versatility. The final section projects the evolving landscape of antiferromagnetic applications within magnetic memory devices, emphasizing their promising trajectory in revolutionizing memory storage solutions.

Two-dimensional electron gases (2DEGs) at oxide interfaces possess many interesting physical properties. Particularly, when the time reversal symmetry is broken, they display a large unidirectional magnetoresistance, which is essential for exploiting two-terminal devices based on such a nonreciprocal response. Here we report a nonreciprocal charge transport behavior in conductive 2DEG at the LaAlO ₃ /KTaO ₃ interface, and the nonreciprocal coefficient γ of up to ~6.8×10 ^-10 A ^-1 T ^-1 cm ² is obtained. Remarkably, the nonreciprocal response is highly tunable by applying gate voltages in a field-effect device. Our work illustrates that KTaO ₃ -based 2DEG is an outstanding platform for the development of multifunctional two-terminal devices and may pave a route for future gate voltage tunable rectification devices.

Thulium Iron Garnet (TIG), as an emerging hotspot in rare-earth iron garnet systems, possesses a large magnetostriction constant (λ₁₁₁) and a low damping coefficient. Therefore, it is possible to induce perpendicular magnetic anisotropy (PMA) through stress, which makes it more desirable for interfacial magnetic proximity or spin–orbit torque effects than Yttrium Iron Garnet (YIG). For achieving a high-quality TIG thin film and regulating its properties accordingly, understanding the effect of growth parameters on the film properties is essential. Using the Pulsed Laser Deposition (PLD) technique, we prepared TIG film on a Gadolinium Gallium Garnet (GGG) substrate. The correlations of its structural properties to the growth conditions are systematically studied, including the oxygen pressure and laser energy. With the annealing, a ferrimagnetic TIG thin film with PMA is successfully obtained. Our work provides a platform for achieving high-quality TIG thin films by experimentally regulating the growth factors.