A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 μm wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 µm-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 µm operation wavelength. The simulated –3 dB bandwidth of the electrical to optical power response is 22 GHz.

A novel grating modulation technique for laser arrays is proposed and demonstrated. This method modifies the initial phase within each grating period, applying a total phase shift that increments in an arithmetic progression, ensuring equal channel spacing across the array. Despite the varying phase shifts, the device maintains coupling efficiency comparable to traditional uniform grating structures. Furthermore, the continuous phase modulation enhances the stability of the lasing wavelength of the primary mode, reducing sensitivity to fabrication errors. This improved tolerance to manufacturing inaccuracies represents a significant technological advancement, making this approach highly promising for applications requiring precise and stable wavelength control.

We report a 4-channel DWDM DFB laser array using four-phase-shifted sampled Bragg grating and asymmetric twin-waveguide technologies, achieving 0.873 nm spacing, >45 dB SMSR, and >10 dB electro-absorption modulator extinction ratio.