Photonic integrated circuit biochemical and biomedical sensors show promising applications in medical diagnosis, food security, healthcare, and environmental monitoring. Silicon-on-insulator subwavelength grating waveguides and cascaded microring resonator structures enhance photon-analyte interaction, offering superior sensing performance (higher sensitivity with lower limit of detection and larger free spectral range) compared to traditional strip and slot waveguide microring resonator structures. In this study, we design, simulate, and experimentally demonstrate a novel and compact biochemical sensor integrating subwavelength grating cascaded microring resonators and multibox subwavelength grating straight waveguides on a silicon-on-insulator platform. We achieve a record-high refractive index sensitivity of 810 nm/RIU with a limit of detection value of 2.04 × 10^-5 RIU. The measured concentration sensitivity for sodium chloride solutions is 1430 pm/% with a limit of detection of 0.04%. The free spectral range is 35.8 nm, and the measured Q factor is 1.9 × 10³. By combining the advantages of cascaded microring resonators with those subwavelength gratings, our sensor offers unprecedented sensitivity for biochemical sensing applications, promising significant enhancements in healthcare diagnostics and environmental monitoring systems.

Integrated microring resonator structures based on silicon-on-insulator (SOI) platforms are promising candidates for high-performance on-chip sensing. In this work, a novel sidewall grating slot microring resonator (SG-SMRR) with a compact size (5 µm center radius) based on the SOI platform is proposed and demonstrated experimentally. The experiment results show that the refractive index (RI) sensitivity and the limit of detection value are 620 nm/RIU and 1.4 × 10^–4 RIU, respectively. The concentration sensitivity and minimum concentration detection limit are 1120 pm/% and 0.05%, respectively. Moreover, the sidewall grating structure makes this sensor free of free spectral range (FSR) limitation. The detection range is significantly enlarged to 84.5 nm in lab measurement, four times that of the FSR of conventional SMRRs. The measured Q-factor is 3.1 × 10³, and the straight slot waveguide transmission loss is 24.2 dB/cm under sensing conditions. These results combined with the small form factor associated with a silicon photonics sensor open up applications where high sensitivity and large measurement range are essential.

A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 μm wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 µm-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 µm operation wavelength. The simulated –3 dB bandwidth of the electrical to optical power response is 22 GHz.

An AlGaInAs multiple-quantum-well (MQW) polarization mode controller (PMC) using a stepped height ridge waveguide is presented, which is monolithically integrated with a sidewall grating distributed feedback laser using quantum well intermixing (QWI). QWI is used to create a 100 nm blueshift in the PMC and to partially eliminate the anisotropy and birefringence of the MQW structure. The PMC structure is modelled and optimized using a 3D full-vectorial Finite-Element Method package. The maximum polarization conversion efficiency (PCE) is around 96% for a 537-μm-long PMC operating at a wavelength of 1550 nm. To maintain a PCE of ≥90%, the fabrication tolerances of the dry-etch corner and ridge waveguide widths are ± 0.05 μm and ± 0.03 μm respectively. The main advantages of the proposed design are that only a single step of MOPVE and two steps of dry etching are required for the whole integrated device, significantly reducing complexity and cost.

A compact sidewall grating slot microring resonator is demonstrated with a high sensitivity of 620 nm/RIU and a limit of detection of 1.4×10^-4 RIU, offering an unbounded detection range.

Photoelectric intelligent sensor chips have become a key technology for next-generation intelligent sensing by integrating photonic devices, electronic circuits, and artificial intelligence algorithms. Recent advances in silicon photonics, two-dimensional materials, heterogeneous integration, and intelligent signal processing have significantly improved their sensitivity, response speed, and integration capability. This review presents a comprehensive overview of photoelectric intelligent sensor chips from fundamental principles to system-level applications. The operating mechanisms, device architectures, fabrication technologies, and photonic integration strategies are summarized, followed by recent progress in industrial, medical, and intelligent sensing applications. Current technical challenges, including material quality, heterogeneous integration, power consumption, and intelligent data processing, are also discussed. Finally, future trends toward highly integrated, low-power, and AI-enabled sensing systems are highlighted. This review provides a concise reference for the development of next-generation photoelectric intelligent sensor chips and their practical applications.