Tungsten diselenide (WSe₂) is extensively investigated as a channel optoelectrode material with remarkable optical, electrical, and magnetic properties and mechanical flexibility.

The integration of flexible electronics and machine learning (ML) algorithms has become a revolutionary force driving the field of intelligent sensing, giving rise to a new generation of intelligent devices and systems. This article provides a systematic review of core technologies and practical applications of ML in flexible electronics. It focuses on analyzing the theoretical frameworks of algorithms such as the Long Short-Term Memory Network (LSTM), Convolutional Neural Network (CNN), and Reinforcement Learning (RL) in the intelligent processing of sensor signals (IPSS), multimodal feature extraction (MFE), process defect and anomaly detection (PDAD), and data compression and edge computing (DCEC). This study explores the performance advantages of these technologies in optimizing signal analysis accuracy, compensating for interference in high-noise environments, optimizing manufacturing process parameters, etc., and empirically analyzes their potential applications in wearable health monitoring systems, intelligent control of soft robots, performance optimization of self-powered devices, and intelligent perception of epidermal electronic systems.

Titanium dioxide (TiO₂) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO₂ is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO₂ exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO₂ nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO₂/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO₂ nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO₂-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology.

Two-dimensional (2D) n-MoS₂ nanosheets (NSs) synthesized via the sol–gel method were deposited onto p-type heavily boron-doped diamond (BDD) film to form a n-MoS₂/p-degenerated BDD (DBDD) heterojunction device. The PL emission results for the heterojunction suggest strong potential for applications using yellow-light-emitting optoelectronic devices. From room temperature (RT) to 180 °C, the heterojunction exhibits typical rectification characteristics with good results for thermal stability, rectification ratio, forward current decrease, and reverse current increase. Compared with the n-MoS₂/p-lightly B-doped (non-degenerate) diamond heterojunction, the heterojunction demonstrates a significant improvement in both its rectification ratio and ideal factor. At 100 °C, the rectification ratio reaches the maximum value and is considered an ideal high temperature for achieving optimal heterojunction performance. When the temperature exceeds 140 °C, the heterojunction transforms into the Zener diode. The heterojunction’s electrical temperature dependence is due to the Fermi level shifting resulting in the weakening of the carrier interband tunneling injection. The n-MoS₂ NSs/p-DBDD heterojunction will broaden future research application prospects in the field of high-temperature consumption in future optoelectronic devices.

Two-dimensional (2D) n-MoS2 nanosheet (NSs) synthesized by sol-gel method was deposited on p-type heavily boron-doped diamond (BDD) film to form n-MoS2/p-degenerated BDD (DBDD) heterojunction device. The PL emission of the heterojunction exhibits a good prospect in the application of yellow light-emitting optoelectronic devices. From room temperature (RT) to 180℃, the heterojunction all exhibits typical rectification characteristics with good thermal stability, the rectification ratio and forward current decrease, the reverse current increase. Compared with the n-MoS2/p-lightly B-doped (non-degenerate) diamond heterojunction, the heterojunction demonstrates a significant improvement in both rectification ratio and ideal factor. At 100°C, the rectification ratio reaches the maximum value and is considered an ideal high temperature for achieving optimal heterojunction performance. When the temperature exceeds 140 ℃, the heterojunction transforms into the Zener diode. The heterojunction electrical temperature dependence is due to the Fermi level shifting resulting in the weakening of the carrier interband tunneling injection. The n-MoS2 NSs/p-DBDD heterojunction will broaden the subsequent research application prospects in the field of high-temperature consumption of future optoelectronic devices.