Two-dimensional (2D) n-MoS₂ nanosheets (NSs) synthesized via the sol–gel method were deposited onto p-type heavily boron-doped diamond (BDD) film to form a n-MoS₂/p-degenerated BDD (DBDD) heterojunction device. The PL emission results for the heterojunction suggest strong potential for applications using yellow-light-emitting optoelectronic devices. From room temperature (RT) to 180 °C, the heterojunction exhibits typical rectification characteristics with good results for thermal stability, rectification ratio, forward current decrease, and reverse current increase. Compared with the n-MoS₂/p-lightly B-doped (non-degenerate) diamond heterojunction, the heterojunction demonstrates a significant improvement in both its rectification ratio and ideal factor. At 100 °C, the rectification ratio reaches the maximum value and is considered an ideal high temperature for achieving optimal heterojunction performance. When the temperature exceeds 140 °C, the heterojunction transforms into the Zener diode. The heterojunction’s electrical temperature dependence is due to the Fermi level shifting resulting in the weakening of the carrier interband tunneling injection. The n-MoS₂ NSs/p-DBDD heterojunction will broaden future research application prospects in the field of high-temperature consumption in future optoelectronic devices.

Two-dimensional (2D) n-MoS2 nanosheet (NSs) synthesized by sol-gel method was deposited on p-type heavily boron-doped diamond (BDD) film to form n-MoS2/p-degenerated BDD (DBDD) heterojunction device. The PL emission of the heterojunction exhibits a good prospect in the application of yellow light-emitting optoelectronic devices. From room temperature (RT) to 180℃, the heterojunction all exhibits typical rectification characteristics with good thermal stability, the rectification ratio and forward current decrease, the reverse current increase. Compared with the n-MoS2/p-lightly B-doped (non-degenerate) diamond heterojunction, the heterojunction demonstrates a significant improvement in both rectification ratio and ideal factor. At 100°C, the rectification ratio reaches the maximum value and is considered an ideal high temperature for achieving optimal heterojunction performance. When the temperature exceeds 140 ℃, the heterojunction transforms into the Zener diode. The heterojunction electrical temperature dependence is due to the Fermi level shifting resulting in the weakening of the carrier interband tunneling injection. The n-MoS2 NSs/p-DBDD heterojunction will broaden the subsequent research application prospects in the field of high-temperature consumption of future optoelectronic devices.