A novel inverse photoconductivity horizon in perovskite photo-memristor applications with various iodine concentrations, electrodes, and modified layers.

The effective control of the sample concentration within droplets is essential in a broad range of assays in chemistry and biochemistry. Here we provide an electrical method for producing batches of aqueous droplets with various chemical concentrations by exploiting fixed-potential induced-charge electroosmosis (ICEO) flow around a bipolar electrode. By applying an AC electric signal to the bipolar electrode and changing the zeta potential on it, the bipolar electrode acts as a gate electrode for generating asymmetric ICEO flow. The ICEO flow induced transverse vortexes interact with two parallel laminar streams with different chemical compositions. Controlled mixing of the aqueous solutions can be achieved by adjusting the shape and size of the asymmetric vortexes via altering the electric signal applied to the gate electrode. The mixed streams are split at a bifurcation, and one of the streams with a desired controlled concentration is pumped into a flow-focusing geometry to generate droplets with adjustable chemical concentrations. The in-droplet concentration increases in the range of 0.412–1.404 mM, as the applied voltage increases in the range of 0–70 mV at 15 kHz. This approach offers a promising method for on-chip control of chemical concentrations within droplets without labor-intensive dilutions while minimizing the sample consumption, showing great potential for next generation droplet-based applications.

With the development of semiconductor technology, the size of traditional metal oxide semiconductor field effect transistor devices continues to decrease, but it cannot meet the requirements of high performance and low power consumption. Low power tunneling field effect transistor (TFET) has gradually become the focus of researchers. This paper proposes a novel T-shaped gate TFET based on the silicon with the negative capacitance (NC-TGTFET). On the basis of TGTFET, ferroelectric material (HZO) is used as gate dielectric. The simulation results show that, compared with the traditional TGTFET, the opening order and sensitivity of the two tunneling junctions are different. The influences of thickness and the doping concentration of pocket and ferroelectric material properties on the characteristics of NC-TGTFET is also discussed by Sentaurus simulation tool. Furthermore, the negative capacitance of ferroelectric material makes NC-TGTFET have a very steep subthreshold swing (18.32 mV/dec) at the range of drain current from 1 × 10 ⁻¹⁵ to 1 × 10 ⁻⁷ A μ m ⁻¹ . And the on-state current ( V _g = 0.5 V, V _d = 0.5 V) is 1.52 × 10 ⁻⁶ A μ m ⁻¹ .

ZnO-based memristors are considered to be promising candidates in neuromorphic computing because of their nonvolatile resistive switching characteristics. Biological synaptic plasticity processes such as long-term potentiation (LTP) and long-term depression (LTD) require the application of driving voltages with different polarity, which inescapably leads to an increase in the operational costs of memristor circuits. In this study, we have successfully introduced a strategic innovation by incorporating a TiO₂ thin layer, thereby achieving unipolar-enhanced bilayer and unipolar-weakened monolayer memristors. In the context of monolayer memristors, the unipolar weakening mechanism primarily arises from the thermal disruption of conduction filaments (CFs) caused by oxygen vacancies. Additionally, the incorporation of a thin TiO₂ layer on the ZnO layer confines Joule heat within the TiO₂ film, inhibiting the promotion of oxygen vacancy diffusion and preventing the occurrence of ZnO CF fracture. Moreover, a two transistor–two memristor (2T2R) unit based on the given memristors is introduced to achieve LTP and LTD characteristics under unipolar voltage pulse excitation. Simulation results show that the 2T2R structure unit can achieve an approximately 50% reduction in time and power consumption during the weight update process.